Zobrazeno 1 - 6 of 6 pro vyhledávání: '"Evgeniy V. Skopin"'
1
Short-range mechanisms in the creation of a ZnO/InGaAs interface
Autor: Gianluca Ciatto, Evgeniy V. Skopin, Marie-Ingrid Richard, Dillon D. Fong, Hubert Renevier
Publikováno v: Crystal Growth & Design
Crystal Growth & Design, 2022, 22 (8), pp.4768-4776. ⟨10.1021/acs.cgd.2c00137⟩
International audience; We perform quantitative analysis of the X-ray absorption data taken in situ during the earliest cycles of the ZnO atomic layer deposition on atomically flat InGaAs (001) surfaces. As deposition progresses, we observe a transit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24f4635449c4a98a6944fd6704a807d0
https://hal.univ-grenoble-alpes.fr/hal-03776959
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3
In Situ Ellipsometry Study of the Early Stage of ZnO Atomic Layer Deposition on In 0.53 Ga 0.47 As
Autor: Jean-Luc Deschanvres, Evgeniy V. Skopin, Hubert Renevier
Publikováno v: physica status solidi (a)
physica status solidi (a), 2020, 217 (8), pp.1900831. ⟨10.1002/pssa.201900831⟩
physica status solidi (a), Wiley, 2020, 217 (8), pp.1900831. ⟨10.1002/pssa.201900831⟩
International audience; We report on the initial stages of ZnO Atomic Layer Deposition (ALD) on In 0.53 Ga 0.47 As (InGaAs), studied by monitoring the ZnO film thickness in situ with spectroscopic ellipsometry. Using diethylzinc (DEZn) and water, at
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::686b58dd908d329f4827043adfd1eb63
https://hal.science/hal-03103267
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4
In situ ellipsometry monitoring of TiO2 atomic layer deposition from Tetrakis(dimethylamido)titanium(IV) and H2O precursors on Si and In0.53Ga0.47As substrates
Autor: P. Abi Younes, Hervé Roussel, M. Anikin, Hubert Renevier, Evgeniy V. Skopin, K. Abdukayumov, Jean-Luc Deschanvres
Publikováno v: Thin Solid Films. 723:138591
TiO 2 Atomic Layer Deposition (ALD) is used in microelectronics due to its ability to produce conformal thin films whose thickness is controlled at the sub-nanometer scale. Tetrakis(dimethylamido)titanium(IV) and water are frequently used precursors
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::01596ca7ce9e38006dc0721f46498f03
https://doi.org/10.1016/j.tsf.2021.138591
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5
The initial stages of ZnO atomic layer deposition on atomically flat In
Autor: Evgeniy V, Skopin, Laetitia, Rapenne, Hervé, Roussel, Jean-Luc, Deschanvres, Elisabeth, Blanquet, Gianluca, Ciatto, Dillon D, Fong, Marie-Ingrid, Richard, Hubert, Renevier
Publikováno v: Nanoscale. 10(24)
InGaAs is one of the III-V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal-semiconductor junction. A key co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::31c92b469bdf0947c0d6887b3500c0aa
https://pubmed.ncbi.nlm.nih.gov/29892744
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6
The initial stages of ZnO atomic layer deposition on atomically flat In 0.53 Ga 0.47 As substrates
Autor: Evgeniy V. Skopin, Jean-Luc Deschanvres, Hubert Renevier, Laetitia Rapenne, Hervé Roussel, Marie-Ingrid Richard, Dillon D. Fong, Elisabeth Blanquet, G. Ciatto
Publikováno v: Nanoscale
Nanoscale, Royal Society of Chemistry, 2018, ⟨10.1039/c8nr02440e⟩
Nanoscale, 2018, ⟨10.1039/c8nr02440e⟩
InGaAs is one of the III-V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal-semiconductor junction. A key co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98fc09c19816c5d817f14672fc6d85ad
https://hal.archives-ouvertes.fr/hal-01819188
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