Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Evgeniy Donchev"'
Publikováno v:
SPIE Proceedings.
In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of havi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0732307de7b74bec1cee1dba07f44258
https://doi.org/10.1117/12.2061959
https://doi.org/10.1117/12.2061959
Autor:
Fang Xie, Mary P. Ryan, Peter M. Gammon, Neil McN. Alford, Evgeniy Donchev, Jonathan Breeze, Peter K. Petrov, Jing S. Pang, Anthony Centeno, D. Jason Riley
Publikováno v:
MRS Energy & Sustainability. 1
The article contains the following errors: Page 23, left column, line 19. The sentence should read: Another requirement for the insulator is a small dielectric constant since for small area devices the capacitance is reduced, however due to the requi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef7a6c73665f4a9fcc9a7b4568dae413
https://doi.org/10.1557/mre.2014.10
https://doi.org/10.1557/mre.2014.10
Autor:
Peter M. Gammon, Evgeniy Donchev, Jing S. Pang, D. Jason Riley, Mary P. Ryan, Neil McN. Alford, Anthony Centeno, Peter K. Petrov, Fang Xie, Jonathan Breeze
Publikováno v:
MRS Energy & Sustainability. 1
This review article provides the state-of-art research and developments of the rectenna device and its two main components – the antenna and the rectifier. Furthermore, the history, efficiency trends, and socioeconomic impact of its research are al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::038094761786fe2e2eaaf648ae7888d3
https://doi.org/10.1557/mre.2014.6
https://doi.org/10.1557/mre.2014.6
Autor:
Vishal Shah, Oliver J. Vavasour, Jing S. Pang, David R. Leadley, Philip Mawby, Craig A. Fisher, Maksym Myronov, Peter M. Gammon, Evgeniy Donchev, Amador Pérez-Tomás, Michael R. Jennings
For the first time, the I-V-T dataset of a Schottky diode has been accurately modelled, parameterised, and fully fit, incorporating the effects of interface inhomogeneity, patch pinch-off and resistance, and ideality factors that are both heavily tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b45132c2c30b9f32675a31d220b2a89
http://wrap.warwick.ac.uk/60431/1/WRAP_Leadley_1.4842096.pdf_.pdf
http://wrap.warwick.ac.uk/60431/1/WRAP_Leadley_1.4842096.pdf_.pdf
Autor:
N.McN. Alford, Philip Mawby, Craig A. Fisher, Amador Pérez-Tomás, Peter M. Gammon, Evgeniy Donchev, Peter K. Petrov, Michael R. Jennings, Vishal Shah, Jing S. Pang, David R. Leadley
Publikováno v:
Journal of Applied Physics. 112:114513
In this paper, we investigate the temperature dependencies of metal-semiconductor interfaces in an effort to better reproduce the current-voltage-temperature (IVT) characteristics of any Schottky diode, regardless of homogeneity. Four silicon Schottk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1c7d92c4049ae462114c614b8baca99
https://doi.org/10.1063/1.4768718
https://doi.org/10.1063/1.4768718