Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Evgenii Zavarin"'
Autor:
Alexey Kolmakov, Emanuele Pelucchi, Michael Fay, LUCIA NASI, Maria Varela, Rafael García Roja, Dmitry Lobanov, Helge Weman, Ferdinand Hofer, Rafal Dunin-Borkowski, Markus Weyers, Joel Eymery, Gazi Aliev, Marina Gutiérrez Peinado, Hitoshi Tampo, Eric Tournié, Douglas Paul, Slawomir Kret, Federico Corni, Graziella Malandrino, Paul Midgley, PEDRO L. GALINDO, Cécile Hébert, Alexander Vasiliev, Adalberto Balzarotti, Ana Sanchez, Grzegorz Jurczak, Ondrej Klimo, Wsevolod Lundin, Matthew Weyland, Thomas Walther, Sandra Van Aert, Dmitri Nikolichev, Lothar Houben, Sascha Sadewasser, Viacheslav Golovanov, Adam Łaszcz, Ian Watson, Srinivasan Anand, Vittorio Morandi, Alessandra Catellani, Paul Munroe, Lydia Laffont, Ursel Bangert, Nicolas Grandjean, Jennifer Gray, Annika Lohstroh, Paul Sellin, Andreu Cabot, Jie Zhang, Ernesto Placidi, Evgenii Zavarin, Jacek Ratajczak, Richard Beanland, Mohammed Benaissa, Dmitri GOLBERG, Michael Stöger-Pollach, Paul Harrison, Monica Bollani, Alexey Novikov, Gilles Patriarche, Vadim Sirotkin, Meilin Liu, Miriam Herrera Collado, Sergey Rubanov, Adam Wojcik, ANNA SGARLATA, Arnold Den Dekker, Thomas Dekorsy, André Vantomme, George Cirlin, Jerzy KĄTCKI, Daniel Hill, Masanori Mitome, Xavier Aymerich, Sergio I. Molina, Paweł Dłużewski, Roberta grazia Toro, Souren Grigorian, Klaus Leifer, Mark Aindow, Jean-Michel Chauveau, Giuseppe Nicotra, Martin Albrecht, Corrado Bongiorno, Jiří Limpouch, Hele Savin
Publikováno v:
A. G. Cullis, P. A. Midgley. CRC Press, 4 p., 2018, 9781351074636. ⟨10.1201/9781351074636⟩
International audience; In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::301d0be2daf17c1032417a5026374bfe
https://hal.science/hal-03555261
https://hal.science/hal-03555261
Publikováno v:
Semiconductors. 39:1304
Structures with InGaN/GaN quantum dots have been studied using photocurrent spectroscopy. The dynamic range of measurements is found to amount to four orders of magnitude under preservation of the signal-to-noise ratio at a level higher than ten. Wit
Publikováno v:
Semiconductors. 39:249
The electrical and optical properties of light-emitting devices with an active region containing several layers of InGaN/GaN quantum dots (QDs) separated by GaN spacers are studied. It is shown that the overgrowth of the QD layer with an InGaN layer
Publikováno v:
Semiconductors. 39:467
The carrier statistics in LED structures with ultrathin multilayer InGaN insertions in a GaN matrix was studied. The optical data obtained indicate that an array of quantum dots (QDs) is formed in these structures. The QDs are scattered in size, whic
Publikováno v:
Semiconductors. 39:100
The behavior of threading dislocations in AlGaN and InGaN layers incorporated into GaN-based heterostructures is studied. It is shown that InGaN layers with an intermediate composition can be used as the most effective dislocation filters. Estimation
Autor:
Sobolev, N. A., Emel Yanov, A. M., Shek, E. I., Besyulkin, A. I., Evgenii Zavarin, Lundin, V. V., Usikov, A. S., Shmidt, N. M., Makovijchuk, M. I., Parshin, E. O.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::dc6c3a9084ffc8f8f5a4dc63daa70bd1
http://www.scopus.com/inward/record.url?eid=2-s2.0-0037260317&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0037260317&partnerID=MN8TOARS
Autor:
Sizov, D. S., Sizov, V. S., Evgenii Zavarin, Lundin, V. V., Fomin, A. V., Tsatsul Nikov, A. F., Ledentsov, N. N.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::938dc40e9ed6abf0e23800e6180aabeb
http://www.scopus.com/inward/record.url?eid=2-s2.0-24044507649&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-24044507649&partnerID=MN8TOARS
Autor:
Evgenii Zavarin, Sizov, D. S., Lundin, W. V., Tsatsulnikov, A. F., Talalaev, R. A., Kondratyev, A. V., Bord, O. V.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::16da525d583e8bca9cb314b758264692
http://www.scopus.com/inward/record.url?eid=2-s2.0-31744431971&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-31744431971&partnerID=MN8TOARS
Autor:
Sakharov, A. V., Lundin, W. V., Krestnikov, I. L., Evgenii Zavarin, Usikov, A. S., Tsatsul Nikov, A. F., Ledentsov, N. N., Hoffmann, A., Bimberg, D., Alferov, Zh I.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::35cb17915c202b452a43de57e4a5ea26
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034594273&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034594273&partnerID=MN8TOARS