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Autor:
Andrey B. Filonov, E. A. Chusovitin, Vlodislav O. Bogorodz, D. L. Goroshko, Béla Pécz, Konstantin N. Galkin, Ildikó Cora, A. M. Maslov, Andrei V. Tupkalo, Sergey A. Dotsenko, Victor E. Borisenko, Nikolay G. Galkin, Evgenii Y. Subbotin, Dmitrii B. Migas
Publikováno v:
Journal of Alloys and Compounds. 770:710-720
The methods of heteroepitaxial growth of Si/CaSi2/Si(111) double heterostructures (DHS) at 500 °C have been developed. Thin CaSi2 layers with the thicknesses of 14–40 nm have been successfully embedded in the silicon matrix. The hR6-CaSi2(001)||Si