Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Evgenii Ubyivovk"'
Autor:
Evgenii Ubyivovk, I. P. Soshnikov, Igor Shtrom, G. E. Cirlin, Vladimir G. Dubrovskii, N. V. Kryzhanovskaya, Rodion R. Reznik
Publikováno v:
Semiconductors. 54:650-653
In a particular case of Au-catalyzed InxGa1 –xAs nanowires, wide compositional tuning has been obtained using metal organic vapor-phase epitaxy, which remains difficult for molecular beam epitaxy. InxGa1 –xAs nanowires are demonstrated with x = 0
Autor:
S. A. Kukushkin, Evgenii Ubyivovk, K. P. Kotlyar, G. E. Cirlin, Rodion R. Reznik, Alexander A. Koryakin
Publikováno v:
CrystEngComm. 21:4707-4717
We propose a new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires during molecular beam epitaxy (MBE). The nanowire MBE growth was achieved at a temperature of 270 °C on both Si(111) and SiC/Si(111) substrates. A sp
Autor:
Sergey Belyaev, Natalia Resnina, Elena Demidova, Alexey Ivanov, Alexander Shelyakov, Vladimir Andreev, Valeriy Chekanov, Evgenii Ubyivovk
Publikováno v:
Journal of Alloys and Compounds. 902:163570
Publikováno v:
Nanotechnology. 31(37)
We present a comparative study of GaAs nanowire growth on Si(111) substrates by molecular beam epitaxy with the assistance of Au and Ag colloidal nanoparticles. Our approach allows the synthesis of nanowires with different catalyst materials in separ
Autor:
Andrei Ipatov, Pavel A. Yunin, Yuliy Vainer, E. V. Pirogov, A. S. Dashkov, Leonid I. Goray, Alexei Bouravlev, M. V. Svechnikov, Evgenii Ubyivovk, M. S. Sobolev, Leonid G. Gerchikov, Nikolay I. Chkhalo, Ekaterina A. Nikitina, Igor V. Ilkiv
Publikováno v:
Journal of Physics D: Applied Physics. 53:455103
Autor:
Evgenii Ubyivovk, Ján Lančok, Evgenii Mokhov, Volodymyr O. Yukhymchuk, Dariya Savchenko, Andreas Pöppl, Bela Shanina, Ekaterina N. Kalabukhova
Publikováno v:
physica status solidi (b). 252:566-572
X-band field-sweep electron spin echo and pulsed electron nuclear double resonance (ENDOR) spectroscopy were used to study n-type 15R SiC wafers grown under carbon (C)-rich conditions with the aim to verify the recently proposed concept that nitrogen
Publikováno v:
Solid State Phenomena. :253-258
Structures of Si(001) hydrofillic bonded wafers have been studied by transmission electron microscopy. Model of three-fold nods generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geome