Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Evgenii S. Kolodeznyi"'
Autor:
Yakov N. Kovach, Vladislav V. Andryushkin, Evgenii S. Kolodeznyi, Innokenty I. Novikov, Artem A. Petrenko, Anna V. Kamarchuk, Stanislav S. Rochas, Dmitrii A. Bauman
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 22, Iss 5, Pp 873-880 (2022)
Optical system consisting of single-mode optical fiber and p-i-n photodiode semiconductor chip with InGaAs active layer was investigated. Considered photodetector module has responsivity in 1.3–1.6 μm. The problem of optical power loss due to inac
Externí odkaz:
https://doaj.org/article/7fb5da5a87a84aed867b11b7c218f7a3
Autor:
Vladislav V. Andryushkin, Anna S. Dragunova, Sergey D. Komarov, Alexey M. Nadtochiy, Andrey G. Gladyshev, Andrey V. Babichev, Alexander V. Uvarov, Innokenty I. Novikov, Evgenii S. Kolodeznyi, Leonid Ya. Karachinsky, Natalia V. Kryzhanovskaya, Vladimir N. Nevedomskii, Anton Yu. Egorov, Vladislav E. Bougrov
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 22, Iss 5, Pp 921-928 (2022)
The results of the study of the optical properties of low-density InGaPAs quantum dots, as well as the effect of low temperatures and thermal annealing parameters on their optical and structural properties were presented. InGaPAs quantum dots were fo
Externí odkaz:
https://doaj.org/article/767f65f8e2974eb19d57bbb18aeb31cf