Zobrazeno 1 - 1
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pro vyhledávání: '"Evgenii O. Parshin"'
Publikováno v:
SPIE Proceedings.
Structures obtained using high-energy ion implantation into silicon are the novel object for optical diagnostics'. Implanted layers are characterized by significant spatial blur of optical transitions, contrary to the traditional sharp filmsubstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::677e914d5536b4cd2132654750541e98
https://doi.org/10.1117/12.182036
https://doi.org/10.1117/12.182036
