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pro vyhledávání: '"Evgenii M. Sokolov"'
Autor:
Statsenko, Alexei V. Sakharov, Dmitri S. Arteev, Evgenii E. Zavarin, Andrey E. Nikolaev, Wsevolod V. Lundin, Nikita D. Prasolov, Maria A. Yagovkina, Andrey F. Tsatsulnikov, Sergey D. Fedotov, Evgenii M. Sokolov, Vladimir N.
Publikováno v:
Materials; Volume 16; Issue 12; Pages: 4265
A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::b9660bf94d48c0a426f2b2c9243ea7e2
