Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Evgenii Moskalenko"'
Publikováno v:
Physics of the Solid State. 55:1563-1595
The spontaneous breaking of the continuous symmetries of a two-dimensional electron-hole system in a strong magnetic field perpendicular to the plane leads to the formation of new ground states and determines the energy spectrum of collective element
Publikováno v:
Physics of the Solid State. 55:1043-1049
This paper presents the results of complex measurements of the microphotoluminescence spectra of quantum-well structures based on InGaN/GaN〈Sm〉 and the determination of the concentration and charge state of the Sm dopant. It has been shown that a
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 7:640-670
The spontaneous breaking of the continuous symmetries of the two-dimensional(2D) electron-hole systems in a strong perpendicular magnetic field leads to the formation of new ground states and determines the energy spectra of the collective elementary
Autor:
L. A. Larsson, D. Dufåker, V. Dimastrodonato, Per-Olof Holtz, Evgenii Moskalenko, Urban Forsberg, Karl Fredrik Karlsson, Erik Janzén, Chih-Wei Hsu, L. O. Mereni, Emanuele Pelucchi, Anders Lundskog
Publikováno v:
Physica B: Condensed Matter. 407:1472-1475
Optical characterization of single quantum dots (QDs) by means of micro-photoluminescence (μPL) will be reviewed. Both QDs formed in the Stranski–Krastanov mode as well as dots in the apex of pyramidal structures will be presented. For InGaAs/GaAs
Publikováno v:
Physics of the Solid State. 54:194-201
The influence of nanoparticles and thin layers of Au, Eu phthalocyanine, and Er nanoparticles on the formation of luminescence spectra of InGaN/GaN quantum-well structures has been investigated. It has been shown that the influence of localized plasm
Autor:
A. Yu. Serov, Evgenii Moskalenko, V. N. Katz, P. O. Holz, V. F. Agekyan, G. Karczewski, N. G. Filosofov
Publikováno v:
Semiconductors. 45:1301-1305
CdTe/MnTe/CdMgTe quantum-well structures with one or two monolayers of MnTe inserted at CdTe/CdMgTe interfaces were fabricated. The spectra of the excitonic luminescence from CdTe quantum wells and their variation with temperature indicate that intro
Publikováno v:
Physics of the Solid State. 53:1680-1688
Based on the results of complex investigations of the influence of the magnetic field strength and measurement temperature on the shape of microphotoluminescence (micro-PL) spectra of Eu-doped InGaN/GaN quantum-well structures, the determination of t
Publikováno v:
Superlattices and Microstructures. 49:294-299
While efficient nuclear polarization has earlier been reported for the charged exciton in InAs/GaAs quantum dots at zero external magnetic field, we report here on a surprisingly high degree of circular polarization, up to ≈ 60 % , for the neutral
Autor:
N. K. Poletaev, Evgenii Moskalenko
Publikováno v:
Physics of the Solid State. 53:398-403
The degree of circular polarization of the photoluminescence of samples with GaAs/AlGaAs quantum wells grown with growth interruption at both interfaces and under conventional growth conditions has been investigated. It has been revealed that, at a l
Publikováno v:
Physics of the Solid State. 52:1260-1266
Fluctuations in time of the intensity of indirect exciton photoluminescence in GaAs/Al0.33Ga0.67As double quantum wells have been studied. An analysis of the behavior of the intensity fluctuations under variation in external control parameters, such