Zobrazeno 1 - 2
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pro vyhledávání: '"Evgeni V. Spesivtsev"'
Autor:
Boris М. Kuchumov, Igor К. Igumenov, Evgeni V. Spesivtsev, Vladimir N. Kruchinin, Igor F. Golovnev, Yuri V. Shevtsov
Publikováno v:
Journal of Crystal Growth. 414:135-142
Processes were studied concerning the deposition of Hf and Mg oxide layers in the slot structures with the aspect ratio values from 30 to 500 by means of a pulsed MOCVD technique with a discrete components dosing. For assembling the slot structures,
Autor:
Yu. V. Shevtsov, B. M. Kuchumov, Evgeni V. Spesivtsev, Vladimir N. Kruchinin, Igor K. Igumenov, Igor F. Golovnev
Publikováno v:
Technical Physics Letters. 40:779-782
The formation of hafnium oxide (HfO2) layers in slit structures by pulsed metalorganic chemicalvapor deposition (MOCVD) method with discrete dosage of reactants has been studied. The MOCVD process employed hafnium tetrakisdipivaloylmethanate as a pre