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pro vyhledávání: '"Everett D. Hinkley"'
Autor:
Everett D. Hinkley, Robert H. Rediker
The interface-alloy technique has been used to produce heterojunctions between GaAs and InSb. X-ray and Kossel line patterns show that, despite the relatively large 14% lattice mismatch between the semiconductors, these heterojunctions are single-cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41e4ea34fa8594fa739f04fbb8f08c16
https://doi.org/10.21236/ad0657777
https://doi.org/10.21236/ad0657777
