Zobrazeno 1 - 10
of 148
pro vyhledávání: '"Evan R, Glaser"'
Autor:
Andrew Venzie, Michael Stavola, W. Beall Fowler, Evan R. Glaser, Marko J. Tadjer, Jason I. Forbus, Mary Ellen Zvanut, Stephen J. Pearton
Publikováno v:
APL Materials, Vol 12, Iss 7, Pp 071108-071108-5 (2024)
Hydrogen in β-Ga2O3 passivates shallow impurities and deep-level defects and can have a strong effect on conductivity. More than a dozen O–D vibrational lines have been reported for β-Ga2O3 treated with the heavy isotope of hydrogen, deuterium. T
Externí odkaz:
https://doaj.org/article/e3a632e433be42ae9c24dd0bfab45a6a
Publikováno v:
Crystals, Vol 12, Iss 9, p 1294 (2022)
GaN and its alloys with InN and AlN are of technological importance for a variety of optical, electronic, and optoelectronic devices due to its high thermal conductivity, wide band gap, high breakdown voltage and high saturation velocity. GaN-based d
Externí odkaz:
https://doaj.org/article/ea829b5a22ea41b6b5c352b3c6957c00
Autor:
Steven J. Brewer, Cory D. Cress, Samuel C. Williams, Hanhan Zhou, Manuel Rivas, Ryan Q. Rudy, Ronald G. Polcawich, Evan R. Glaser, Jacob L. Jones, Nazanin Bassiri-Gharb
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Abstract The ability to tailor the performance of functional materials, such as semiconductors, via careful manipulation of defects has led to extraordinary advances in microelectronics. Functional metal oxides are no exception – protonic-defect-co
Externí odkaz:
https://doaj.org/article/c70e194247cd46a5a910eddb32ca26b4
Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping
Autor:
Dylan Evans, Pierre Valvin, Evan R. Glaser, Thomas Pelini, Bernard Gil, Song Liu, Guillaume Cassabois, Andrew L. Yeats, Gaihua Ye, James H. Edgar, Lianjie Xue, Rui He, Bin Liu, Christine Elias, Jiahan Li
Publikováno v:
Chemistry of Materials. 33:9231-9239
The nature of point defects in hexagonal boron nitride (hBN) is of current interest for the potential to alter its optical and electrical properties. The strong interaction between neutrons and the...
Autor:
Evan R. Glaser, Zachary R. Robinson, Laura B. Ruppalt, Sharka M. Prokes, Alexander C. Kozen, Mark E. Twigg, Hans Cho, Thomas J. Larrabee
Publikováno v:
ACS Applied Materials & Interfaces. 12:16639-16647
Niobium oxide (NbOx) materials of various compositions are of interest for neuromorphic systems that rely on memristive device behavior. In this study, we vary the composition of NbOx thin films deposited via atomic layer deposition (ALD) by incorpor
Autor:
Tomasz Sochacki, M. Iwinska, John L. Lyons, Michal Bockowski, Mary Ellen Zvanut, Subash Paudel, Evan R. Glaser
Publikováno v:
Physical Review B. 104
We investigate the properties of heavily C-doped GaN grown by hydride vapor phase epitaxy using both optical experiments and hybrid density functional theory calculations. Previous work has established that carbon acceptors $({\mathrm{C}}_{\mathrm{N}
Autor:
Mary Ellen Zvanut, Evan R. Glaser, Michal Bockowski, M. Iwinska, Tomasz Sochacki, Subash Paudel
Publikováno v:
Journal of Electronic Materials. 48:2226-2232
Carbon doping is a viable approach for compensating the unintentional donors in GaN and achieving semi-insulating substrates necessary for high-frequency, high-power devices. In this work, bulk material properties and point defects are studied in mm-
Autor:
Rachael L. Myers-Ward, Daniel J. Pennachio, Karl D. Hobart, Alan G. Jacobs, Andrei Osinsky, Alyssa L. Mock, Jenifer Hajzus, Jaime A. Freitas, Fikadu Alema, Mona A. Ebrish, Jeffrey M. Woodward, James C. Gallagher, Travis J. Anderson, Charles R. Eddy, Marko J. Tadjer, Jennifer K. Hite, Evan R. Glaser, Neeraj Nepal, Michael A. Mastro
Publikováno v:
Oxide-based Materials and Devices XII.
Ga2O3 is the only ultra-wide bandgap semiconductor with melt-growth substrate technology similar to that of Si, heterostructure device technology similar to that of the III-Nitride family, and high growth rate (GR) epitaxial technologies such as MOCV
Autor:
Zheng eWang, Baochuan eLin, Anahita eMostaghim, Robert A Rubin, Evan R Glaser, Pimonsri eMittraparp-arthorn, Janelle Renee Thompson, Varaporn eVuddhakul, Gary J Vora
Publikováno v:
Frontiers in Microbiology, Vol 4 (2013)
Melanization due to the inactivation of the homogentisate-1,2-dioxygenase gene (hmgA) has been demonstrated to increase stress resistance, persistence and virulence in some bacterial species but such pigmented mutants have not been observed in pathog
Externí odkaz:
https://doaj.org/article/e37dd9c4668d4b6faceb231de3e84c87
Autor:
Eberhard Richter, James C. Culbertson, Vijayendra K. Garg, Markus Weyers, Evan R. Glaser, Joelson André de Freitas, Aderbal C. Oliveira
Publikováno v:
Journal of Crystal Growth. 500:111-116
Thick freestanding iron-doped semi-insulating GaN layers were grown by Hydride Vapor Phase Epitaxy on GaN/sapphire templates. Iron doping was achieved by using Fe57-enriched Fe2O3 reduced to elemental Fe in-situ avoiding uptake of C from organometall