Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Evan M Anderson"'
Autor:
Evan M. Anderson, Gunjanpreet Kaur, Hanan Qaqish, Karthik Narayanan, Wilson Rodriguez, Brian Miremadi
Publikováno v:
Stroke: Vascular and Interventional Neurology, Vol 3, Iss S2 (2023)
Introduction Carotid stump syndrome (CSS) is a paradoxical phenomenon that occurs when there are repeated ischemic events in the carotid vascular territory despite demonstrated occlusion of the ipsilateral internal carotid artery (ICA). It is thought
Externí odkaz:
https://doaj.org/article/fd6c2242e37542dea08efcdb5ca4f106
Publikováno v:
AIAA Journal. :1-15
Coupled aerothermoelastic simulations are required for the accurate simulation of many high-speed flow problems. Hence, the multidisciplinary analysis of such problems is the main focus of the curr...
Autor:
Madhav Sankhyan, Evan M Anderson, Jorge F Urquiaga, Jakob T Hockman, Ruchy Aggarwal, Najib E El Tecle, Philippe J Mercier
Publikováno v:
Cureus.
Autor:
Ting S. Luk, Michael T. Marshall, Evan M. Anderson, Paul G. Kotula, Ping Lu, Tzu-Ming Lu, Daniel R. Ward, Steve M. Young, DeAnna M. Campbell, Shashank Misra, Aaron M. Katzenmeyer, Ezra Bussmann, Peter Q. Liu, James Anthony Ohlhausen
Publikováno v:
Journal of Materials Research. 35:2098-2105
Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). Here, we use mid-infrared variable angle spectroscopic elli
Publikováno v:
AIAA SCITECH 2022 Forum.
Autor:
Connor Halsey, Jessica Depoy, DeAnna M. Campbell, Daniel R. Ward, Evan M. Anderson, Scott W. Schmucker, Jeffrey A. Ivie, Xujiao Gao, David A. Scrymgeour, Shashank Misra
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a693a840899f26d639a6dc8afd049fea
http://arxiv.org/abs/2110.11580
http://arxiv.org/abs/2110.11580
Autor:
DeAnna M. Campbell, Shashank Misra, Albert D. Grine, Ping Lu, Lisa A Tracy, Reza Arghavani, Evan M. Anderson, Scott W. Schmucker, Juan P. Mendez, Jeffrey A. Ivie, Xujiao Gao, Tzu-Ming Lu
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The atomic precision advanced manufacturing (APAM) enabled vertical tunneling field effect transistor (TFET) presents a new opportunity in microelectronics thanks to the use of ultra-high doping and atomically abrupt doping profiles. We present model
Autor:
Pietro Bortolotti, Ernesto Camarena, Nick Johnson, Evan M. Anderson, Roland Feil, Josh Paquette
Increasing growth in land-based wind turbine blades to enable higher machine capacities and capacity factors is creating challenges in design, manufacturing, logistics, and operation. Enabling further blade growth will require technology innovation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a92892aaca345a380f316d7497b8d1a
https://wes.copernicus.org/preprints/wes-2021-74/
https://wes.copernicus.org/preprints/wes-2021-74/
Autor:
Jonathan T. Olesberg, Evan M. Anderson, Chad A. Stephenson, Lauren E. S. Rohwer, Michael Goldflam, Phillip Gamache, Charles L. Alford, DeAnna M. Campbell, M. Mark Gunter, Samuel D. Hawkins, Jayson L. Briscoe, John F. Klem, Michael G. Wood, W. T. Coon, David W. Peters
Publikováno v:
2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
We discuss thinned InAsSb resonant infrared detectors that are designed to enable high quantum efficiency by using interleaved nanoantennas to read out two wavelengths from each pixel simultaneously.
Autor:
James Anthony Ohlhausen, Ting S. Luk, Daniel R. Ward, Michael T. Marshall, Paul G. Kotula, Tzu-Ming Lu, Aaron M. Katzenmeyer, Evan M. Anderson, Ping Lu, Ezra Bussmann, DeAnna M. Campbell, Shashank Misra
Publikováno v:
ECS Transactions. 93:37-40