Zobrazeno 1 - 10
of 208
pro vyhledávání: '"Evan H. C. Parker"'
Autor:
Stephen M. Thomas, Marti J. Prest, Dominic J. F. Fulgoni, Adam R. Bacon, Tim J. Grasby, David R. Leadley, Evan H. C. Parker, Terence E. Whall
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 2 (2023)
Measurements of 1/f noise in Si and Si0.64Ge0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is
Externí odkaz:
https://doaj.org/article/4f6f9284b457492fba919694b43cc5ad
Autor:
Terrence E. Whall, Evan H. C. Parker
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2001)
Recent and encouraging developments in Schot- tky and MOS gated Si/SiGe field effect transistors are sur- veyed. Circuit applications are now beginning to be investi- gated. The authors discuss some of this work and consider future prospects for the
Externí odkaz:
https://doaj.org/article/d5f440b25d354ef7a2c7bfee5e157c81
Autor:
David R. Leadley, Evan H. C. Parker, Mika Prunnila, Peter S. Barry, Terry E. Whall, Philip Daniel Mauskopf, Peter A. R. Ade, Dmitry Morozov, M. J. Prest, Maksym Myronov, T. L. R. Brien, Rashmikant V. Sudiwala, C. Dunscombe
Publikováno v:
Brien, T, Ade, P, Barry, P S, Dunscombe, C J, Leadley, D R, Morozov, D V, Myronov, M, Parker, E, Prest, M J, Prunnila, M, Sudiwala, R V, Whall, T E & Mauskopf, P D 2016, ' Optical response of strained-and unstrained-silicon cold-electron bolometers ', Journal of Low Temperature Physics, vol. 184, no. 1-2, pp. 231-237 . https://doi.org/10.1007/s10909-016-1569-x
We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ($32 \times 14~\mathrm{\mu m}$) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the si
Publikováno v:
Science and Technology of Advanced Materials, Vol 13, Iss 5, p 055002 (2012)
Suspended crystalline Ge semiconductor structures are created on a Si(001) substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives
Externí odkaz:
https://doaj.org/article/0ae005c56edf40ec9a460dedeb0e2b44
Autor:
David R. Leadley, J. S. Richardson-Bullock, Maksym Myronov, M. J. Prest, Richard J. H. Morris, A. Dobbie, David Gunnarsson, Evan H. C. Parker, Vishal Shah, Mika Prunnila, Terry E. Whall
Publikováno v:
Richardson-Bullock, J S, Prest, M J, Shah, V A, Gunnarsson, D, Prunnila, M, Dobbie, A, Myronov, M, Morris, R J H, Whall, T E, Parker, E H C & Leadley, D R 2015, ' Comparison of electron-phonon and hole-phonon energy loss rates in silicon ', Solid-State Electronics, vol. 103, pp. 40-43 . https://doi.org/10.1016/j.sse.2014.09.002
The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identic
Autor:
Evan H. C. Parker, Terry E. Whall, Andrey Shchepetov, John E. Halpin, Mika Prunnila, David R. Leadley, Stephen Rhead, Vishal Shah, M. J. Prest, Maksym Myronov
Publikováno v:
Shah, V A, Myronov, M, Rhead, S D, Halpin, J E, Shchepetov, A, Prest, M J, Prunnila, M, Whall, T E, Parker, E H C & Leadley, D R 2014, ' Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry ', Solid-State Electronics, vol. 98, no. August, pp. 93-98 . https://doi.org/10.1016/j.sse.2014.04.015
A thin, flat and single crystal membrane on which to mount sensors is generally required for integration with electronics through standard silicon processing technology. We present an approach to producing single crystal membranes of germanium with i
Autor:
James Richardson-Bullock, M. J. Prest, Evan H. C. Parker, Maksym Myronov, David R. Leadley, Terry E. Whall, Chalermwat Wongwanitwatana, Vishal Shah
Publikováno v:
ECS Transactions. 50:737-746
Suspended crystalline Ge semiconductor structures are created on a Si(001) substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives
Publikováno v:
Nanoscale CMOS
Autor:
Craig Riddet, K. H. Chan, Evan H. C. Parker, Terry E. Whall, David R. Leadley, Asen Asenov, Jeremy R. Watling
Publikováno v:
IEEE Transactions on Electron Devices. 59:1878-1884
We present a comprehensive study of hole transport in germanium layers on “virtual” substrates using a full band Monte Carlo simulation approach, considering alternate “virtual” substrate and channel orientations and including the impact of t
Autor:
Vishal Shah, Evan H. C. Parker, Maksym Myronov, Xue-Chao Liu, David R. Leadley, A. Dobbie, Van Huy Nguyen
Publikováno v:
physica status solidi c. 8:952-955
Bi-axial tensile strained Si epilayers with extremely high lattice mismatch strain up to 2.13% were grown from a disilane (Si2H6) precursor on Si1-xGex/Si(100) VSs by Reduced Pressure Chemical Vapour Deposition. We discuss the conditions under which