Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Evan Glaser"'
Publikováno v:
Crystals. 12:1294
GaN and its alloys with InN and AlN are of technological importance for a variety of optical, electronic, and optoelectronic devices due to its high thermal conductivity, wide band gap, high breakdown voltage and high saturation velocity. GaN-based d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c88b61074ceb1996d9c2eedde086fdb3
https://doi.org/10.3390/cryst12091294
https://doi.org/10.3390/cryst12091294
Autor:
Marko J. Tadjer, Fikadu Alema, Andrei Osinsky, Michael Mastro, Neeraj Nepal, Jeffrey Woodward, Rachael Myers-Ward, Evan Glaser, Jaime Freitas, Alan Jacobs, James Gallagher, Alyssa Mock, Daniel Pennachio, Jenifer Hajzus, Mona Ebrish, Travis Anderson, Karl Hobart, Jennifer Hite, Charles Eddy
Publikováno v:
Radar Sensor Technology XXV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc9b51d36147be205ecad2edbed1e80
https://doi.org/10.1117/12.2588499
https://doi.org/10.1117/12.2588499
Autor:
Marko J Tadjer, Andrew D Koehler, Nadeemullah A Mahadik, Evan Glaser, Jaime A. Freitas, Boris Feigelson, Virginia D. Wheeler, Karl D. Hobart, Francis J Kub, Akito Kuramata
Publikováno v:
ECS Meeting Abstracts. :1420-1420
Monoclinic β-Ga2O3 has attracted significant attention as a high power electronics material based on its ultra-wide energy gap (4.9 eV), high theoretical critical field (8 MV/cm), as well as the commercially availability of inexpensive substrates gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5009b375572aa267323eccc538ba289e
https://doi.org/10.1149/ma2018-01/23/1420
https://doi.org/10.1149/ma2018-01/23/1420
Autor:
Shojan Pullockaran Pavunny, Hunter Banks, Paul Klein, Kevin Daniels, Matthew T DeJarld, Evan Glaser, Sam G Carter, Rachael L. Myers-Ward, Kurt Gaskill
Publikováno v:
ECS Meeting Abstracts. :1786-1786
Single silicon vacancies VSi in silicon carbide nanostructures hold great promise for future technological applications in scalable quantum computing and information processing for simulation, sensing, and communication. These defects are typically c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a06a649a567a4c859e5841e776d9248f
https://doi.org/10.1149/ma2017-02/40/1786
https://doi.org/10.1149/ma2017-02/40/1786
Publikováno v:
Surface Science. 170:386-390
An investigation of “impurity-shifted” intersubband transitions in n-inversion layers of (100) Si MOSFETs whose oxides were purposely contaminated with mobile positive ions during processing has been carried out to study localization of electrons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65f326e78e6e59f0d44236c29289a8a6
https://doi.org/10.1016/0039-6028(86)90991-x
https://doi.org/10.1016/0039-6028(86)90991-x