Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Evan Downey"'
Autor:
R.L. Klinger, Evan Downey, Kevin Matocha, J. L. Garrett, Jesse B. Tucker, James W. Kretchmer, Steve Arthur, Jeffery B. Fedison, H.C. Peters, Chris S. Cowen, Larry Burton Rowland
Publikováno v:
Materials Science Forum. :1265-1268
Results of a 1200V 4H-SiC vertical DMOSFET based on ion implanted n+ source and pwell regions are reported. The implanted regions are activated by way of a high temperature anneal (1675°C for 30 min) during which the SiC surface is protected by a la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a2d2aa4a02bd2915a2cd0d9f3a16e2e
https://doi.org/10.4028/www.scientific.net/msf.527-529.1265
https://doi.org/10.4028/www.scientific.net/msf.527-529.1265
Publikováno v:
Solid-State Electronics. 42:755-760
The research and development activities carried out to develop a SiC flame sensor for gas turbines utilized for power generation are discussed. These activities included the fabrication and characterization of SiC UV photodiodes and small SiC signal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6120200d43f168ede7d0bdca4385e09f
https://doi.org/10.1016/s0038-1101(97)00260-8
https://doi.org/10.1016/s0038-1101(97)00260-8
Autor:
M. Ghezzo, Evan Downey, James W. Kretchmer, V. Krishnamurthy, W. Hennessy, G. Michon, D. M. Brown
Publikováno v:
physica status solidi (a). 162:459-479
The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperature SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the Wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96ed0fc12ca6ba40c4b197c06687303d
https://doi.org/10.1002/1521-396x(199707)162:1<459::aid-pssa459>3.0.co
https://doi.org/10.1002/1521-396x(199707)162:1<459::aid-pssa459>3.0.co
Autor:
Evan Downey, James W. Kretchmer, William Andrew Hennessy, D.M. Brown, Gerald J. Michon, Mario Ghezzo, V. Krishnamurthy
Publikováno v:
Solid-State Electronics. 39:1531-1542
The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperature SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af8b52f0cf42b91b1feb56c341ff6026
https://doi.org/10.1016/0038-1101(96)00079-2
https://doi.org/10.1016/0038-1101(96)00079-2
Publikováno v:
Applied Physics Letters. 63:1206-1208
Ion implanted planar p‐n junctions are important for silicon carbide discrete devices and integrated circuits. Conversion to p‐type of n‐type 6H‐SiC was observed for the first time using boron implantation. Diodes were fabricated with boron i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1fd09d93a5fa3880ee1bd68fae7a74e
https://doi.org/10.1063/1.109772
https://doi.org/10.1063/1.109772