Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Evan B. Jones"'
Autor:
Matthew R. King, Pavel Borodulin, El-Hinnawy Nabil, Robert M. Young, B. Wagner, Andy Ezis, Evan B. Jones, Doyle T. Nichols, C. Furrow, Jeyanandh Paramesh, James A. Bain, Carlos R. Padilla
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
Omni-directional GeTe inline phase-change switches (IPCS) have been fabricated and heterogeneously integrated with commercial SiGe BiCMOS technology to create a reconfigurable receiver. The reconfigurable receiver required integrating thirteen (13) 8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0916b0fb5b818c83d89a51f65a14fe23
https://doi.org/10.1109/mwsym.2016.7540103
https://doi.org/10.1109/mwsym.2016.7540103
Autor:
Sean McLaughlin, Pavel Borodulin, Michael J. Lee, Evan B. Jones, El-Hinnawy Nabil, Robert S. Howell, Robert M. Young, Marc E. Sherwin, Matthew R. King, John S. Mason, B. Wagner, Victor Veliadis, Megan Snook
Publikováno v:
IEEE Electron Device Letters. 34:1313-1315
An inline chalcogenide phase-change radio-frequency (RF) switch using germanium telluride and driven by an integrated, electrically isolated thin-film heater for thermal actuation has been fabricated. A voltage pulse applied to the heater terminals w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f282c17f07949e90bd932ca9abd9e0a3
https://doi.org/10.1109/led.2013.2278816
https://doi.org/10.1109/led.2013.2278816
Autor:
Victor Veliadis, John S. Mason, Pavel Borodulin, Evan B. Jones, Matthew R. King, Robert M. Young, Robert S. Howell, B. Wagner, Michael J. Lee, El-Hinnawy Nabil
Publikováno v:
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
An inline chalcogenide phase change RF switch utilizing germanium telluride (GeTe) and driven by an integrated, electrically isolated thin film heater for thermal actuation has been fabricated. A voltage or current pulse applied to the heater termina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::168deea3fd415fb6efe0dd53e65714a8
https://doi.org/10.1109/csics.2013.6659195
https://doi.org/10.1109/csics.2013.6659195
Autor:
Andrew C. Guyette, James G. Champlain, Pavel Borodulin, Robert M. Young, Evan B. Jones, Doyle T. Nichols, Laura B. Ruppalt, El-Hinnawy Nabil
Publikováno v:
Journal of Applied Physics. 119:244501
The DC and RF electronic behaviors of GeTe-based phase change material switches as a function of temperature, from 25 K to 375 K, have been examined. In its polycrystalline (ON) state, GeTe behaved as a degenerate p-type semiconductor, exhibiting met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8397cd81a40bba081dcf76eca4206002
https://doi.org/10.1063/1.4954313
https://doi.org/10.1063/1.4954313
Autor:
Mike Salmon, Pavel Borodulin, El-Hinnawy Nabil, Robert S. Howell, Jitty Gu, Matthew R. King, Robert M. Young, Brian P. Wagner, Evan B. Jones, Doyle T. Nichols
Publikováno v:
Journal of Applied Physics. 118:094501
Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80d2e86f9b476e80265ae95a797d8c8c
https://doi.org/10.1063/1.4929419
https://doi.org/10.1063/1.4929419
Autor:
Robert M. Young, Robert S. Howell, Michael J. Lee, Pavel Borodulin, El-Hinnawy Nabil, Matthew R. King, B. Wagner, Evan B. Jones
Publikováno v:
Journal of Applied Physics. 116:054504
We show the finite element simulation of the melt/quench process in a phase change material (GeTe, germanium telluride) used for a radio frequency switch. The device is thermally activated by an independent NiCrSi (nickel chrome silicon) thin film he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9278488ecb699f95ed94ff8271de6e31
https://doi.org/10.1063/1.4891239
https://doi.org/10.1063/1.4891239
Autor:
B. Wagner, Sean McLaughlin, Pavel Borodulin, Robert S. Howell, Michael J. Lee, El-Hinnawy Nabil, Evan B. Jones, Matthew R. King, Robert M. Young, John S. Mason
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:041204
Germanium telluride (GeTe) films have been recently demonstrated as the active element in low-loss RF switches where a 7.3 THz cut-off frequency (Fco) was achieved. In order to simultaneously realize the low ON-state transmission loss and large OFF-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a504720ff6577ba6655879a749fbea1
https://doi.org/10.1116/1.4883217
https://doi.org/10.1116/1.4883217