Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Evaldas Svirplys"'
Publikováno v:
Micromachines, Vol 12, Iss 4, p 407 (2021)
Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent
Externí odkaz:
https://doaj.org/article/e52d971ab5574c47a744f617f33e7374
Publikováno v:
Materials; Volume 15; Issue 16; Pages: 5534
In this research, the wetting property control of a stainless-steel surface, structured using parallel processing via an array of 64-femtosecond laser beams, is presented. The scanning of an 8 × 8-beam array over the sample was used to uniformly cov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::638e194abf90b3118c959c4d5dd84c2e
https://doi.org/10.3390/ma15165534
https://doi.org/10.3390/ma15165534
Autor:
Linas Minkevičius, Heiko Richter, Irmantas Kašalynas, Gediminas Račiukaitis, Evaldas Svirplys, Heinz-Wilhelm Hübers, Simonas Indrišiūnas, Andrzej Urbanowicz, Till Hagelschuer
Publikováno v:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVI.
In this work transmission and reflection losses in silicon diffractive THz optical components fabricated by direct laser ablation are investigated. One of the possible sources of reflection/transmission losses in laser-fabricated optics is scattering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a45f3843ac664f6c681a3f6b3221b07d
https://doi.org/10.1117/12.2574616
https://doi.org/10.1117/12.2574616
Autor:
Evaldas Svirplys, Heiko Richter, Till Hagelschuer, Gediminas Račiukaitis, Linas Minkevičius, Heinz-Wilhelm Hübers, Simonas Indrisiunas, Irmantas Kašalynas, Andrzej Urbanowicz
Publikováno v:
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
the dependence of THz transmittance on the surface roughness of differently laser-patterned silicon was investigated in the frequency range of 0.1-4.7 THz. The scattering of THz waves on rough silicon surface was found as the main mechanism that dete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a73eddcbd50132c4fd88283dd5793d20
https://doi.org/10.1109/irmmw-thz.2019.8874393
https://doi.org/10.1109/irmmw-thz.2019.8874393
Publikováno v:
Micromachines
Volume 12
Issue 4
Micromachines, Vol 12, Iss 407, p 407 (2021)
Volume 12
Issue 4
Micromachines, Vol 12, Iss 407, p 407 (2021)
Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbc0eb925299361892a9aad14fdafa67
https://doi.org/10.3390/mi12040407
https://doi.org/10.3390/mi12040407