Fluorescence microscopy for quality control in nanoimprint lithography

Autor: C. M. Sotomayor Torres, Freimut Reuther, J. Seekamp, Ivan Maximov, Eva-Lena Sarwe, Jouni Ahopelto, Patrick Carlberg, Christian Mayer, S. Zankovich, Marc Beck, Ch. Finder, Lars Montelius, K. Pfeiffer

Publikováno v: Finder, C, Zankovych, S, Maximov, I, Reuther, F, Sarwe, E L, Seekamp, J, Pfeiffer, K, Carlberg, P, Beck, M, Ahopelto, J, Sotomayor Torres, C M, Montelius, L & Mayer, C 2003, ' Fluorescence microscopy for quality control in nanoimprint lithography ', Microelectronic Engineering, vol. 67-68, pp. 623-628 . https://doi.org/10.1016/S0167-9317(03)00123-0

Fluorescence microscopy is introduced as a low cost quality control process for nanoimprint lithography. To depict imprinted structures down to 1 μm lateral size and to detect residues down to 100 nm lateral size, the standard printable polymer mr-I

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5eadf810cf53438b971f76a87f320cd
https://doi.org/10.1016/S0167-9317(03)00123-0

Threshold stoichiometry for beam induced nitrogen depletion of SiN

Autor: J Uribasterra, Heiko Timmers, Harry J. Whitlow, Robert Elliman, Eva-Lena Sarwe, Tdm Weijers

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 190:428-432

Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species. the beam energy, and t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::65af6febd52146d7523bf8989f444612
https://doi.org/10.1016/s0168-583x(01)01217-4

Scanning probe microscopy characterisation of masked low energy implanted nanometer structures

Autor: Srinivasan Anand, Mariusz Graczyk, Harry J. Whitlow, Eva-Lena Sarwe, Lars Montelius, Ivan Maximov, Thomas Winzell

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 173:447-454

In order to fabricate and characterise nanometer structures, silicon wafers were implanted with masks ranging from several μm down to 200 nm in lateral dimensions. The masks were produced by an electron beam lithography, metal deposition and metal l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::27109d7217b6a119167f3bb6ed3a0d79
https://doi.org/10.1016/s0168-583x(00)00416-x

Fabrication and mechanical characterization of ultrashort nanocantilevers

Autor: Eva-Lena Sarwe, Lars Montelius, S. G. Nilsson

Publikováno v: Applied Physics Letters. 83:990-992

Three aspects on nanocantilevers are presented in this letter. First, we present the fabrication process of 2 μm long freestanding chromium cantilevers with width 150 nm, and thickness 50 nm. Second, a measurement scheme using an atomic force micros

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1256c70a66bee369ba1598542b9047ef
https://doi.org/10.1063/1.1592303

Novel Approach for Lateral Current Confinement in Vertical Resonant Tunneling Devices

Autor: Lars Samuelson, Takashi Fukui, Werner Seifert, Niclas Carlsson, Ivan Maximov, Boel Gustafson, Lars-Erik Wernersson, Andrei Litwin, Eva–Lena Sarwe

Publikováno v: Japanese Journal of Applied Physics. 38:343

We have used the Schottky depletion around overgrown tungsten (W) features to define vertical conducting channels having submicron lateral extension. In the first example, epitaxially buried lattices of tungsten discs are used, which give rise to a s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e473b852a8b08478324d44a7d8d5241
https://doi.org/10.1143/jjap.38.343