Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Eva M. Strzelecka"'
Publikováno v:
Microelectronic Engineering. 35:385-388
Refractive microlenses are formed in semiconductor materials by transfer of a lens-like shape of reflowed erodable polyimide mask into the substrate by reactive ion etching. Simultaneous monitoring of the etch rates of the mask material and the semic
Autor:
Brian Thibeault, Eric R. Hegblom, Larry A. Coldren, R.L. Naone, K. Bertilsson, Eva M. Strzelecka, Philip D. Floyd
Publikováno v:
IEEE Photonics Technology Letters. 9:11-13
We characterize the high-speed modulation properties of thin-oxide-apertured vertical-cavity lasers. The modulation response scales with device diameter due to the negligible optical scattering loss present in these devices. A small diameter laser of
Autor:
Brad D. Cantos, Andrei V. Shchegrov, Jason P. Watson, Aram Mooradian, Vincent V. Doan, Michael K. Liebman, John G. McInerney, William R. Hitchens, Eva M. Strzelecka, Glen P. Carey, Dicky Lee, Alan Lewis, Charles A. Amsden, Arvydas Umbrasas
Publikováno v:
SPIE Proceedings.
We describe the design, fabrication and performance of novel, electrically pumped, vertical compound cavity 976nm InGaAs lasers that emit at 488nm via intracavity second harmonic generation. The resulting light source is an ideal replacement for Ar-i
Autor:
John G. McInerney, David Heald, Glen P. Carey, Keith W. Kennedy, Dicky Lee, Vincent V. Doan, Aram Mooradian, Wonill Ha, Jason P. Watson, Hailong Zhou, William R. Hitchens, Eva M. Strzelecka, Kevin L. Lear, Brad D. Cantos, Alan Lewis, Andrei V. Shchegrov
Publikováno v:
SPIE Proceedings.
We describe design and performance of novel, electrically pumped, vertical compound cavity semiconductor lasers emitting at 980 nm. The laser combines a vertical cavity semiconductor laser with a partially reflecting output coupler and an external ca
Autor:
Charles A. Amsden, John G. McInerney, Vincent V. Doan, Jason P. Watson, Bryan D. Moran, Dicky Lee, Arvydas Umbrasas, Andrei V. Shchegrov, Aram Mooradian, Eva M. Strzelecka, Alan Lewis, Michael K. Liebman
Publikováno v:
SPIE Proceedings.
We describe a novel blue-green laser platform, based on the intracavity frequency doubling of Novalux Extended Cavity Surface Emitting Lasers. We have demonstrated 5 to 40mW of single-ended, 488nm, single-longitudinal mode emission with beam quality
Autor:
Michael K. Liebman, Arvydas Umbrasas, John G. McInerney, Glen P. Carey, Dicky Lee, Vincent V. Doan, Aram Mooradian, Brad D. Cantos, Alan Lewis, Andrei V. Shchegrov, William R. Hitchens, Eva M. Strzelecka, David Heald, Jason P. Watson, Charles A. Amsden
Publikováno v:
SPIE Proceedings.
We have developed novel electrically pumped, surface-emitting lasers emitting at 980 nm with an extended coupled cavity. The concept is scalable from monolithic low power (~10 mW) devices all the way to high power extended cavity lasers. The latter h
Autor:
Vincent V. Doan, Michael K. Liebman, Dicky Lee, Andrei V. Shchegrov, Bryan D. Moran, Charles A. Amsden, John G. McInerney, Arvydas Umbrasas, Eva M. Strzelecka, Aram Mooradian, Jason P. Watson
Publikováno v:
SPIE Proceedings.
We describe the properties of novel blue-green sources based on intracavity frequency doubling of the Novalux family of high-brightness infrared surface-emitting lasers. They are highly compact, efficient, reliable, stable and manufacturable, capable
Autor:
Charles A. Amsden, William R. Hitchens, Jason P. Watson, Eva M. Strzelecka, Glen P. Carey, Alan Lewis, Vincent V. Doan, J. L. Cannon, Dicky Lee, Andrei V. Shchegrov, Brad D. Cantos, Arvydas Umbrasas, Aram Mooradian, David Heald, John G. McInerney, Michael K. Liebman
Publikováno v:
SPIE Proceedings.
Autor:
John G. McInerney, Charles A. Amsden, William R. Hitchens, Michael K. Liebman, Eva M. Strzelecka, J. L. Cannon, Vincent V. Doan, Kevin L. Lear, David Heald, Dicky Lee, Glen P. Carey, Andrei V. Shchegrov, Brad D. Cantos, Jason P. Watson, Alan Lewis, Aram Mooradian, Arvydas Umbrasas
Publikováno v:
SPIE Proceedings.
We describe design, fabrication and performance of novel, electrically pumped, vertical compound cavity InGaAs lasers emitting at 980 and 920 nm. The concept is scalable and has been demonstrated using monolithic low power (~10 mW) devices all the wa
Publikováno v:
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.
Vertical-cavity surface-emitting lasers (VCSELs) are very promising for data transmission in fiber links and free-space optical interconnections. Recently, a new method for fabricating arrays of multiple-wavelength VCSELs has been demonstrated. In th