Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Eva Bestelink"'
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Abstract Low saturation voltages and extremely high intrinsic gain can be achieved in contact‐controlled thin‐film transistors (TFTs) with staggered device architecture, enabled by the energy barrier introduced at the source contact. The resultin
Externí odkaz:
https://doaj.org/article/7764bc031d954b958ee401cec352f5e6
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract Artificial neural networks (ANNs) providing sophisticated, power-efficient classification are finding their way into thin-film electronics. Thin-film technologies require robust, layout-efficient devices with facile manufacturability. Here,
Externí odkaz:
https://doaj.org/article/20797b84320c4ac3a8fd702209b11d10
Publikováno v:
Advanced Electronic Materials, Vol 8, Iss 4, Pp n/a-n/a (2022)
Abstract Contact‐controlled transistors are rapidly gaining popularity. However, simply using a rectifying source contact often leads to unsatisfactory operation, merely as a thin‐film transistor with low drain current and reduced effective mobil
Externí odkaz:
https://doaj.org/article/05a0c7425d61499fae9215c9e827d7ed
Autor:
Eva Bestelink, Olivier de Sagazan, Lea Motte, Max Bateson, Benedikt Schultes, S. Ravi P. Silva, Radu A. Sporea
Publikováno v:
Advanced Intelligent Systems, Vol 3, Iss 1, Pp n/a-n/a (2021)
New materials and optimized fabrication techniques have led to steady evolution in large area electronics, yet significant advances come only with new approaches to fundamental device design. The multimodal thin‐film transistor introduced here offe
Externí odkaz:
https://doaj.org/article/af58635ec822493489a0c075cfd08ecf
Publikováno v:
Advanced Optical Materials.
Autor:
Salman Alfarisyi, Patryk Golec, Eva Bestelink, Kham M. Niang, Andrew J. Flewitt, S. Ravi P. Silva, Radu A. Sporea
Despite rapidly expanding interest in thin-film source-gated transistors (SGTs), the high temperature dependence of drain current (TDDC) in devices comprising Schottky source barriers is delaying wide adoption. To reduce this effect, alternative sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d001a63667be5fee28d9b69bc048cb24
Publikováno v:
IEEE Transactions on Electron Devices. 68:4962-4965
Contact-controlled devices, such as source-gated transistors (SGTs), deliberately use energy barriers at the source, and naturally, the positive temperature dependence (PTD) of drain current can be utilized for temperature sensing. We exploit the dif
Publikováno v:
SID Symposium Digest of Technical Papers. 52:294-297
Autor:
Radu A. Sporea, Georgios Bairaktaris, Luca Maiolo, Francesco Maita, S. Ravi P. Silva, Kalil Ali, Kham M. Niang, Andrew J. Flewitt, Eva Bestelink
Publikováno v:
IEEE Sensors Journal. 20:14903-14913
Silicon-based digital electronics have evolved over decades through an aggressive scaling process following Moore’s law with increasingly complex device structures. Simultaneously, large-area electronics have continued to rely on the same field-eff
Publikováno v:
SID Symposium Digest of Technical Papers. 51:444-447