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MOCVD of the Cubic Zinc Nitride Phase, Zn3N2, Using Zn[N(SiMe3)2]2 and Ammonia as Precursors

Publikováno v: Chemical Vapor Deposition. 11:409-414

Thin films of cubic zinc nitride, Zn 3 N 2 , were obtained by metal-organic (MO)CVD at substrate temperatures between 275 °C and 410 C. Bis[bis(trimethylsilyl)amido]zinc was used as source for Zn and ammonia as the N source. The films were deposited

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::675ca25efb6900cba6456e094a8aac5f
https://doi.org/10.1002/cvde.200506383

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Investigations on InN whiskers grown by chemical vapour deposition

Autor: Frank Hipler, Roland A. Fischer, Harish Parala, Alexander Birkner, Eva Maile, Anjana Devi, Hans Werner Becker

Publikováno v: Journal of Crystal Growth. 231:68-74

Nanostructures of compound semiconductors of group-III nitrides are ideal building blocks for nanoscale optoelectronic devices. InN has a low decomposition temperature and the growth of nanoscale crystalline InN material at low temperatures is diffic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0676099685e08e3f293af0767b58ea2f
https://doi.org/10.1016/s0022-0248(01)01463-4

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Morphology controlled growth of arrays of GaN nanopillars and randomly distributed GaN nanowires on sapphire using (N3)2Ga[(CH2)3NMe2] as a single molecule precursor

Autor: Andreas, Wohlfart, Anjana, Devi, Eva, Maile, Roland A, Fischer

Publikováno v: Chemical communications (Cambridge, England). (9)

Controlled growth of oriented GaN nanopillars and randomly distributed nanowires is accomplished by MOCVD using (N3)2Ga[(CH2)3NMe2] as a single molecule precursor.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::a15a4fcf191ee9a099625bfdbd20240b
https://pubmed.ncbi.nlm.nih.gov/12123087

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Morphology controlled growth of arrays of GaN nanopillars and randomly distributed GaN nanowires on sapphire using (N3)2Ga[(CH2)3NMe2] as a single molecule precursorElectronic supplementary information (ESI) available: characterisation data. See http://www.rsc.org/suppdata/cc/b2/b201858f

Autor: A. Wohlfart, Anjana Devi, Eva Maile, Roland A. Fischer

Publikováno v: Chemical Communications. :998-999

Controlled growth of oriented GaN nanopillars and randomly distributed nanowires is accomplished by MOCVD using (N3)2Ga[(CH2)3NMe2] as a single molecule precursor.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6d17b068aea4d2e83175305a48c75636
https://doi.org/10.1039/b201858f

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