Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Eunpyo Park"'
Autor:
Dong Yeon Woo, Gichang Noh, Eunpyo Park, Min Jee Kim, Dae Kyu Lee, Yong Woo Sung, Jaewook Kim, YeonJoo Jeong, Jongkil Park, Seongsik Park, Hyun Jae Jang, Nakwon Choi, Yooyeon Jo, Joon Young Kwak
Publikováno v:
Neuromorphic Computing and Engineering, Vol 4, Iss 3, p 034001 (2024)
In-memory computing facilitates efficient parallel computing based on the programmable memristor crossbar array. Proficient hardware image processing can be implemented by utilizing the analog vector-matrix operation with multiple memory states of th
Externí odkaz:
https://doaj.org/article/e65cc0538c2047459f6f564baab9d4da
Autor:
Minkyung Kim, Eunpyo Park, Jongkil Park, Jaewook Kim, YeonJoo Jeong, Suyoun Lee, Inho Kim, Jong-Keuk Park, Sung-Yun Park, Joon Young Kwak
Publikováno v:
Results in Physics, Vol 38, Iss , Pp 105620- (2022)
This study investigates the triple-level cell (TLC) memory retention of a MoS2-channel based charge trap flash (CTF) device. A top-gated CTF device with a high-κ gate dielectric is found to have a high coupling ratio, which enhances the tunneling ef
Externí odkaz:
https://doaj.org/article/87d00fcd5a6b43e69466853590bfcd3c
Autor:
Minkyung Kim, Eunpyo Park, In Soo Kim, Jongkil Park, Jaewook Kim, YeonJoo Jeong, Suyoun Lee, Inho Kim, Jong-Keuk Park, Tae-Yeon Seong, Joon Young Kwak
Publikováno v:
Crystals, Vol 11, Iss 1, p 70 (2021)
A synaptic device that contains weight information between two neurons is one of the essential components in a neuromorphic system, which needs highly linear and symmetric characteristics of weight update. In this study, a charge trap flash (CTF) mem
Externí odkaz:
https://doaj.org/article/16ee4042072243a88f7bbc62aacc1b1a
Autor:
Eunpyo Park, Jae Eun Seo, Gichang Noh, Yooyeon Jo, Dong Yeon Woo, In Soo Kim, Jongkil Park, Jaewook Kim, YeonJoo Jeong, Suyoun Lee, Inho Kim, Jong-Keuk Park, Sangbum Kim, Jiwon Chang, Joon Young Kwak
Publikováno v:
Journal of Materials Chemistry C. 10:16536-16545
Multiple synaptic weight states, a high handwritten digit recognition accuracy, and the spike-timing-dependent plasticity (STDP) biological learning rule are successfully demonstrated by using a pentagonal 2D layered PdSe2-based synaptic device.
Publikováno v:
ACS Applied Materials & Interfaces. 13:43480-43488
Two-dimensional (2D) materials have been considered key materials for the future logic devices due to the excellent electrostatic integrity originating from their ultrathin nature. However, the carrier polarity control of 2D material field-effect tra
Autor:
Jae Eun Seo, Tanmoy Das, Eunpyo Park, Eunyeong Yang, Jeong Hyeon Kim, Dong-Wook Seo, Jiwon Chang, Minkyung Kim, Joon Young Kwak
Publikováno v:
ACS Applied Materials & Interfaces. 13:1861-1871
Achieving a high-quality metal contact on two-dimensional (2D) semiconductors still remains a major challenge due to the strong Fermi level pinning and the absence of an effective doping method. Here, we demonstrate high performance "all-PtSe2" field
Publikováno v:
Electronics. 12:45
The use of graphene and two-dimensional materials for industrial, scientific, and medical applications has recently received an enormous amount of attention due to their exceptional physicochemical properties. There have been numerous efforts to inco
Autor:
Gichang Noh, Hwayoung Song, Heenang Choi, Mingyu Kim, Jae Hwan Jeong, Yongjoon Lee, Min‐Yeong Choi, Saeyoung Oh, Min‐kyung Jo, Dong Yeon Woo, Yooyeon Jo, Eunpyo Park, Eoram Moon, Tae Soo Kim, Hyun‐Jun Chai, Woong Huh, Chul‐Ho Lee, Cheol‐Joo Kim, Heejun Yang, Senugwoo Song, Hu Young Jeong, Yong‐Sung Kim, Gwan‐Hyoung Lee, Jongsun Lim, Chang Gyoun Kim, Taek‐Mo Chung, Joon Young Kwak, Kibum Kang
Publikováno v:
Advanced Materials. 34:2204982
Publikováno v:
Advanced Electronic Materials. 8:2200485
Autor:
Cheolmin Park, Joon Young Kwak, Injun Lee, Kibum Kang, Seungwoo Song, Sung-Yool Choi, Byeong-Soo Bae, Mert Miraç Çiçek, Hu Young Jeong, In-Young Jung, Min Soo Kang, Hyun-Jun Chai, Eunpyo Park, Engin Durgun, Han Beom Jeong
Publikováno v:
ACS Nano
Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::853d587bb803538a998ae7c60086d26d
https://hdl.handle.net/11693/76883
https://hdl.handle.net/11693/76883