Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Eunkee Hong"'
Publikováno v:
KEPCO Journal on Electric Power and Energy. 2:425-431
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea9ff44f091c7161300bb8003cdaf410
https://doi.org/10.18770/kepco.2016.02.03.425
https://doi.org/10.18770/kepco.2016.02.03.425
Publikováno v:
Organometallics. 18:36-39
A new type of catalyst for the syndiospecific polymerization of styrene, Cp*Ti(N(CH2CH2O)3) (3), was prepared by either the reaction of triethanolamine with Cp*TiCl3 in the presence of triethylamine or the reaction of (N(CH2CH2O)3)TiCl with LiCp*. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8150e6d85d9cb6a65fdeff18ad1c70bd
https://doi.org/10.1021/om980784d
https://doi.org/10.1021/om980784d
Publikováno v:
Journal of Photochemistry and Photobiology A: Chemistry. 101:39-44
The photolysis of 3-phenyl-4-phenylethynylcyclobut-3-en- trans -1,2-dicarboxylic acid dimethylester (PPCB) in methanol yields 1:1 adducts ( 1a–1d, 2a and 2b ) and an acetylene reduction product ( 3 ). The major products are 2a and 2b under neutral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ff6e5eca8092822f7d51ef7a80de640
https://doi.org/10.1016/s1010-6030(96)04421-8
https://doi.org/10.1016/s1010-6030(96)04421-8
Publikováno v:
Journal of Organometallic Chemistry. 523:211-219
The synthesis, characterization and olefin polymerization properties of Group 4 compounds {1,2-(CH2)10(C5H3)}2MCl2 (M Ti 5, Zr 6, Hf 7) containing annulated twelve-membered ring cyclopentadienyl ligands are reported. The reactions of lithiated an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4710e84b103445c58c7d5d208f5f0a2
https://doi.org/10.1016/0022-328x(96)06410-8
https://doi.org/10.1016/0022-328x(96)06410-8
Publikováno v:
Journal of Organometallic Chemistry. 499:159-165
Allyltrimethylsilane reacts with phenylalkynes in the presence of aluminium chloride catalyst under mild conditions to afford silylphenyldienes in moderate yield. In this allylsilylation reaction, the silyl group adds regioselectively to the terminal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b28b695045ba0c480e1462b065264709
https://doi.org/10.1016/0022-328x(95)00323-i
https://doi.org/10.1016/0022-328x(95)00323-i
Autor:
Ho-Kyu Kang, Hayoung Yi, Hong-Gun Kim, Yong-Soon Choi, Seok-Woo Nam, Young-Ho Koh, Mansug Kang, ByeongJu Bae, Namjin Cho, Seung-Heon Lee, Jinhyung Park, Chilhee Chung, Jun-Won Lee, Eunkee Hong, Seungmoo Lee
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
Flowable CVD (Chemical Vapor Deposition) process having merits in terms of both superior gap-fill performance of SOD (Spin-on Dielectric) and process stability of CVD was introduced for the interlayer dielectric (ILD) in sub-20nm devices based on new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21e1490a594a3b398e8fd3f13e01c293
https://doi.org/10.1109/iitc.2012.6251590
https://doi.org/10.1109/iitc.2012.6251590
Publikováno v:
Advanced Materials. 13:1094-1096
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::543433d14c09548ac238044169f0d759
https://doi.org/10.1002/1521-4095(200107)13:14<1094::aid-adma1094>3.0.co
https://doi.org/10.1002/1521-4095(200107)13:14<1094::aid-adma1094>3.0.co
Publikováno v:
ChemInform. 27
Allyltrimethylsilane reacts with phenylalkynes in the presence of aluminium chloride catalyst under mild conditions to afford silylphenyldienes in moderate yield. In this allylsilylation reaction, the silyl group adds regioselectively to the terminal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd67ba34a2a19987e35832ae3d646156
https://doi.org/10.1002/chin.199601188
https://doi.org/10.1002/chin.199601188
Autor:
Deok-Young Jung, Joo-Tae Moon, Mun-jun Kim, Jun-Won Lee, Kyung-Mun Byun, Seok-Woo Nam, Eunkee Hong, Hyongsoo Kim, Chilhee Chung, Seung-Heon Lee, Jung-Hoo Lee, Hyo-sug Lee, Mansug Gang
Publikováno v:
2010 IEEE International Interconnect Technology Conference.
A highly robust gap-fill process technology of spin-on glass (SOG) was developed for the interlayer dielectric (ILD) in sub-30nm devices. We revealed that the filling behavior of SOG within gaps during spin-coating is mainly dependent on the capillar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aab5e725b672c32d9534949a0790feb
https://doi.org/10.1109/iitc.2010.5510709
https://doi.org/10.1109/iitc.2010.5510709
Autor:
Ju-Bum Lee, Hyun Jo Kim, Eunkee Hong, Hong-Gun Kim, Eun Kyung Baek, Sun-Hoo Park, Joo-Tae Moon, Ju-seon Goo, Ho-Kyu Kang, Hyeon Deok Lee
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
New PMD (Pre-Metal Dielectric) process by employing polysilazane based inorganic SOG (spin-on-glass) is suggested for future VLSI devices. Compared with conventional SOG materials, the film made from new SOG has higher wet etch resistance, which is c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e69b3f1993fdbd7b46b1551bfa9bda15
https://doi.org/10.1109/iedm.2001.979482
https://doi.org/10.1109/iedm.2001.979482