Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Eunkang Park"'
Autor:
Thanh Huong Thi Nguyen, Van Quang Nguyen, Seyeop Jeong, Eunkang Park, Heechan Jang, Nyun Jong Lee, Soogil Lee, Byong-Guk Park, Sunglae Cho, Hyun-Woo Lee, Jung-Il Hong, Sanghoon Kim
Publikováno v:
Communications Physics, Vol 4, Iss 1, Pp 1-8 (2021)
Unidirectional spin Hall magnetoresistance (USMR) is a directionally dependent feature of a ferromagnetic/normal metal bilayer for which the underlying mechanisms are still under debate. Here, the authors investigate the crystallographic dependence o
Externí odkaz:
https://doaj.org/article/0742931fb183457091042036482a6d6c
Autor:
Eunkang Park, Nyun-Jong Lee, Seyeop Jeong, Sanghoon Kim, Min-Gu Kang, Soogil Lee, Byong-Guk Park, Woojin Kim
Publikováno v:
Journal of the Korean Magnetics Society. 33:99-104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ab4835bc0272da24e8878dbea6017ba
https://doi.org/10.4283/jkms.2023.33.2.099
https://doi.org/10.4283/jkms.2023.33.2.099
Autor:
Younghun Jo, Donghyeon Lee, Sanghoon Kim, Tae Heon Kim, Soogil Lee, Jimin Jeong, Heechan Jang, Nyun Jong Lee, Eunkang Park, Kyoung-Whan Kim, Byong-Guk Park, Jongmin Lee, Sanghan Lee, Jungmin Park, Seyeop Jeong
Publikováno v:
Applied Physics Letters. 119:212402
Spin orbit torque (SOT) is essential to magnetization modulation in various ferromagnet/non-magnet bilayers. In this study, we demonstrated that SOT can be enhanced in a hybrid system composed of a perovskite oxide NdNiO3 (NNO) and a Ni81Fe19/Pt bila
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e56aa2d9f31cc8168c826d13d5a47331
https://doi.org/10.1063/5.0065420
https://doi.org/10.1063/5.0065420
Autor:
Ji-sung Kim, Duck-Hyung Lee, Bo-Young Seo, Min-Su Kim, Dong-Hyun Kim, Bongsang Lee, Hyo-sang Lee, Chang-Hyun Park, Yong-Kyu Lee, Bae-Seong Kwon, Ga-Young Lee, Chang-Min Jeon, Sung-Hee Cho, Hong-Kook Min, Eunkang Park
Publikováno v:
2016 IEEE 8th International Memory Workshop (IMW).
We present a highly scalable 2nd generation 45-nm split-gate embedded flash, which has been scaled of 40% unit-cell-size (almost same size with 28-nm technology node) from the 1st generation 45-nm embedded flash without using extra masks, processes a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bc0a2904ace1e0895325765b96c0e3d
https://doi.org/10.1109/imw.2016.7495275
https://doi.org/10.1109/imw.2016.7495275