Zobrazeno 1 - 10
of 777
pro vyhledávání: '"Eunjung Cha"'
Publikováno v:
Communications Engineering, Vol 3, Iss 1, Pp 1-7 (2024)
Abstract Multiplexed local charge storage, close to quantum processors at cryogenic temperatures could generate a multitude of control signals, for electronics or qubits, in an efficient manner. Such cryogenic electronics require generating quasi-sta
Externí odkaz:
https://doaj.org/article/ae6cf488293a479b8e03a0752b090a04
Autor:
Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti, Arsalan Pourkabirian, Jörgen Stenarson, Junjie Li, Dae-Hyun Kim, Jan Grahn
Publikováno v:
IEEE Transactions on Electron Devices. 70:2431-2436
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e1676405570485edab6ad365737d10d
https://doi.org/10.1109/ted.2023.3255160
https://doi.org/10.1109/ted.2023.3255160
Autor:
Francesco Serra Di Santa Maria, Christoforos Theodorou, Francis Balestra, Gerard Ghibaudo, Eunjung Cha, Cezar B. Zota
Publikováno v:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d75f07b659cef80789c4ca430c9b191
https://doi.org/10.1109/essderc55479.2022.9947142
https://doi.org/10.1109/essderc55479.2022.9947142
Autor:
Pier Andrea Francese, Peter Mueller, Eunjung Cha, Marcel Kossel, Thomas Morf, Asma Chabane, Cezar B. Zota, Mridula Prathapan
Publikováno v:
ESSCIRC
In this work, we report the characterization and modeling of a 14 nm bulk FinFET technology from room-temperature down to 4.6 K. A cryogenic device model is used which shows excellent fit to measured data and can accurately predict the performance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b6336e7517cb3260064231520f2fae7
Autor:
Arsalan Pourkabirian, Jörgen Stenarson, Giuseppe Moschetti, Niklas Wadefalk, Eunjung Cha, Jan Grahn
Publikováno v:
IEEE Electron Device Letters. 41:1005-1008
This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of $112~\mu \text{W}$ . This result was obtained by using 100-nm gate length
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ae0bc61a4558a0826cee43c126da458
https://doi.org/10.1109/led.2020.3000071
https://doi.org/10.1109/led.2020.3000071
Autor:
Mridula Prathapan, Peter Mueller, David Heim, Maria Vittoria Oropallo, Matthias Brandli, Pier Andrea Francese, Marcel Kossel, Andrea Ruffino, Cezar Zota, Eunjung Cha, Thomas Morf
In this paper, we provide a system level perspective on the design of control electronics for large scale quantum systems. Quantum computing systems with high-fidelity control and readout, coherent coupling, calibrated gates, and reconfigurable circu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f27eeb981b0eba3279462fad2f3feabc
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
The InP HEMT is the preferred transistor technology for cryogenic low-noise amplification from 1 GHz up to 200 GHz. The InP HEMT shows its superiority at temperatures 5 to 15 K and technology development must be made with knowledge about the special
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c54e06dfbdfee2f19fc83a41f0a96000
https://doi.org/10.1109/iedm13553.2020.9372031
https://doi.org/10.1109/iedm13553.2020.9372031