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Akademický článek

Highly flexible graphene nanoplatelet-polydimethylsiloxane strain sensors with proximity-sensing capability

Autor: Hyokeun Lee, Min Jung Kim, Jong Hun Kim, Jong-Young Lee, Eunji Ji, Andrea Capasso, Heon-Jin Choi, Wooyoung Shim, Gwan-Hyoung Lee

Publikováno v: Materials Research Express, Vol 7, Iss 4, p 045603 (2020)

Flexible strain sensors are essential for providing electronic skin with the ability to detect motions and pressure, enabling their use in health applications and robotics. In this context, strain sensors should simultaneously guarantee a high sensit

Externí odkaz: https://doaj.org/article/b3d0baf3e2b748559ccd1cf0d2e3ec55

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Modulation of electrical properties in MoTe2 by XeF2-mediated surface oxidation

Autor: Eunji Ji, Jong Hun Kim, Wanggon Lee, June-Chul Shin, Hyungtak Seo, Kyuwook Ihm, Jin-Woo Park, Gwan-Hyoung Lee

Publikováno v: Nanoscale Advances. 4:1191-1198

Transition metal dichalcogenides (TMDs) are promising candidates for the semiconductor industry owing to their superior electrical properties.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6fb67aa280b22b9608f01b563e03b0cc
https://doi.org/10.1039/d1na00783a

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Exciton-dominant photoluminescence of MoS2 by a functionalized substrate

Autor: Eunji Ji, Kyungmin Yang, June-Chul Shin, Youngbum Kim, Jin-Woo Park, Jeongyong Kim, Gwan-Hyoung Lee

Publikováno v: Nanoscale. 14:14106-14112

A photoluminescence mapping image of monolayer (1L) MoS2 clearly shows the difference in PL intensity at the boundary between bare SiO2 and plasma-treated SiO2 (3 min).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::84630849a28365be6dcc011260b906f3
https://doi.org/10.1039/d2nr03455g

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Substrate effect on doping and degradation of graphene

Autor: Min Jung Kim, Jong-Young Lee, Eunji Ji, Dongchul Sung, Suklyun Hong, Gwan Hyoung Lee, Jinwoo Park, Namwon Kim

Publikováno v: Carbon. 184:651-658

Graphene is influenced by its surrounding environment, such as adsorbates, charged impurities, and interface traps, owing to its large surface area and ultra-thin thickness. Herein, the effect of substrate conditions on the doping and degradation of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2fc7844e9701f277ee5e33d7aa8ec43a
https://doi.org/10.1016/j.carbon.2021.08.048

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Modulation of electrical properties in MoTe

Autor: Eunji, Ji, Jong Hun, Kim, Wanggon, Lee, June-Chul, Shin, Hyungtak, Seo, Kyuwook, Ihm, Jin-Woo, Park, Gwan-Hyoung, Lee

Publikováno v: Nanoscale advances. 4(4)

Transition metal dichalcogenides (TMDs) are promising candidates for the semiconductor industry owing to their superior electrical properties. Their surface oxidation is of interest because their electrical properties can be easily modulated by an ox

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::c8e2fa8ebd9b9c8906274126ec2c755c
https://pubmed.ncbi.nlm.nih.gov/36131764

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Multifunctional Two-Dimensional PtSe2-Layer Kirigami Conductors with 2000% Stretchability and Metallic-to-Semiconducting Tunability

Autor: Hee-Suk Chung, Sang Sub Han, Jung Han Kim, Mashiyat Sumaiya Shawkat, Gwan Hyoung Lee, Emmanuel Okogbue, Kyu Hwan Oh, Tae-Jun Ko, Yeonwoong Jung, Jong Hun Kim, Jinwoo Ma, Lei Zhai, Eunji Ji

Publikováno v: Nano Letters. 19:7598-7607

Two-dimensional transition-metal dichalcogenide (2D TMD) layers are highly attractive for emerging stretchable and foldable electronics owing to their extremely small thickness coupled with extraordinary electrical and optical properties. Although in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6636db644a00cdb5fa9a536d3b4d0a70
https://doi.org/10.1021/acs.nanolett.9b01726

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Horizontal-to-Vertical Transition of 2D Layer Orientation in Low-Temperature Chemical Vapor Deposition-Grown PtSe2 and Its Influences on Electrical Properties and Device Applications

Autor: Hee-Suk Chung, Junyoung Kwon, Eunji Ji, Jong Hun Kim, Kyu Hwan Oh, Gwan Hyoung Lee, Emmanuel Okogbue, Seung Min Yu, Yeonwoong Jung, Chanwoo Noh, Tae-Jun Ko, Sang Sub Han, Jung Han Kim, YounJoon Jung

Publikováno v: ACS Applied Materials & Interfaces. 11:13598-13607

Two-dimensional (2D) transition-metal dichalcogenides (2D TMDs) in the form of MX2 (M: transition metal, X: chalcogen) exhibit intrinsically anisotropic layered crystallinity wherein their material properties are determined by constituting M and X el

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::00bc144b42d2a35fe29d2c9468210252
https://doi.org/10.1021/acsami.9b01078

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