Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Eungtaek Kim"'
Publikováno v:
SID Symposium Digest of Technical Papers. 50:885-887
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b4561c958e6c1ad2b9750e48e687792
https://doi.org/10.1002/sdtp.13064
https://doi.org/10.1002/sdtp.13064
Autor:
Jeong Woo Park, Eungtaek Kim, Yang-Kyu Choi, Jun-Young Park, Choong-Ki Kim, Kyung Cheol Choi, Myung Keun Lee, Sang-Hee Ko Park, Myeong-Lok Seol
Publikováno v:
IEEE Transactions on Electron Devices. 64:3189-3192
Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) fabricated by low-temperature processes on a flexible substrate can easily be degraded by mechanical deformation. Furthermore, lower performance in terms of the initial characteristics and re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c782dc0328b8623bb66c991dd9dda4fb
https://doi.org/10.1109/ted.2017.2717444
https://doi.org/10.1109/ted.2017.2717444
Autor:
Jeong Woo Park, Eungtaek Kim, Woo Jae Jang, Jun-Hong Park, Myung Keun Lee, Jinhan Yoo, Dae Young Yang, Sang-Hee Ko Park, Kyung Cheol Choi
Publikováno v:
IEEE Transactions on Electron Devices. 64:164-169
Highly transparent and low-resistive multilayered gate electrodes, MoO3/indium–tin oxide (ITO)/Ag/ZnS (MIAZ) playing as the high-work-function layer, the nonreactive interface layer, the lateral conduction layer, and the index-matching layer, respe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d03c9cfc8b8b13973e2d8e840bd631f2
https://doi.org/10.1109/ted.2016.2631567
https://doi.org/10.1109/ted.2016.2631567
Autor:
Choong-Ki Kim, Sungwoo Jun, Jun-Young Park, Tewook Bang, Myung Keun Lee, Yang-Kyu Choi, Hagyoul Bae, Kyung Cheol Choi, Sang-Hee Ko Park, Eungtaek Kim, Myeong-Lok Seol, Seung-Bae Jeon
Publikováno v:
ACS Applied Materials & Interfaces. 8:23820-23826
An electro-thermal annealing (ETA) method, which uses an electrical pulse of less than 100 ns, was developed to improve the electrical performance of array-level amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). The practicality of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ff0f5efc6d4b03c430941f9889185f9
https://doi.org/10.1021/acsami.6b06377
https://doi.org/10.1021/acsami.6b06377
Autor:
Woo Jae Jang, Woohyun Kim, Jun-Hong Park, Sang-Hee Ko Park, Myung Keun Lee, Kyung Cheol Choi, Eungtaek Kim
Publikováno v:
IEEE Transactions on Electron Devices. 63:1066-1071
We suggest functional passivation layers in the form of a distributed Bragg reflector (DBR) composed of ZnS and LiF for transparent thin-film transistors (TFTs) to improve the stability under negative bias illumination stress (NBIS). The luminous tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12e38c5a04277f0e21f41b934a7b2f9b
https://doi.org/10.1109/ted.2015.2513414
https://doi.org/10.1109/ted.2015.2513414
Autor:
Byeong-Soo Bae, Jeong Hyun Kwon, Hyeon-Gyun Im, Kyung Cheol Choi, Sang-Hee Ko Park, Eungtaek Kim, Ki Soo Chang
Publikováno v:
Journal of Information Display. 16:123-128
The thin-film encapsulation (TFE) technology is a salient technique for the realization of flexible organic light-emitting diodes. To reliably fabricate bendable and lightweight displays, ultra-thin and flexible encapsulation is required. Reported he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ca499f922ed0019c65267774c8db87d
https://doi.org/10.1080/15980316.2015.1046959
https://doi.org/10.1080/15980316.2015.1046959
Autor:
Eun Gyo Jeong, Youngjun Kim, Kyung Cheol Choi, Whang Je Woo, Yang-Kyu Choi, Jeong Gyu Song, Seong Bae Jeon, Eungtaek Kim, Choong-Ki Kim, Hagyoul Bae, Hyungjun Kim, Myung Keun Lee
Publikováno v:
Nanotechnology. 28(5)
Field-effect transistors (FETs) composed of 2D materials (2DMs) such as transition-metal dichalcogenide (TMD) materials show unstable electrical characteristics in ambient air due to the high sensitivity of 2DMs to water adsorbates. In this work, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::decc5d6d000719579ddaa16adc37ab61
https://pubmed.ncbi.nlm.nih.gov/28029109
https://pubmed.ncbi.nlm.nih.gov/28029109
Autor:
Yun Cheol Han, Kyung Cheol Choi, Byoung-Cheul Park, Seonil Kwon, Eungtaek Kim, Sin-Hyeok Kang, Woohyun Kim
Publikováno v:
Advanced Electronic Materials. 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbcaed175688968418390f59d630d703
https://doi.org/10.1002/aelm.201600457
https://doi.org/10.1002/aelm.201600457
Autor:
Sin-Hyeok Kang, Sang-Hee Ko Park, Byoung-Cheul Park, Eungtaek Kim, Jun-Hong Park, Kyung Cheol Choi, Woo Jae Jang
Publikováno v:
SID Symposium Digest of Technical Papers. 46:1756-1758
Transition metal oxide TFTs were fabricated on a fabric substrate for wearable display. Atomic layer deposition (ALD) was employed to reduce process temperature. The gate electrode (Ti/Al/Ti) was deposited by thermal evaporation. The gate insulator a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98eb448d5907b20105989e8d5e4f2be5
https://doi.org/10.1002/sdtp.10242
https://doi.org/10.1002/sdtp.10242
Autor:
Jin Yeong Kim, Yun Cheol Han, Kyung Cheol Choi, Sungmee Park, Byoung-Cheul Park, Eungtaek Kim, Sung-Min Lee, Woohyun Kim, Seonil Kwon
Publikováno v:
Organic Electronics. 14:3007-3013
We reported the first organic light-emitting diodes (OLEDs) on actual soft fabrics that can be used for a wearable display. Polyurethane (PU) and poly(vinyl alcohol) (PVA) layers, which only degrade slightly the flex stiffness of bare fabrics due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ad47eb135621dca6786e1b4176eb80
https://doi.org/10.1016/j.orgel.2013.09.001
https://doi.org/10.1016/j.orgel.2013.09.001