Zobrazeno 1 - 10 of 41 pro vyhledávání: '"Eun-Sik Jung"'
2
Investigation of the layout and optical proximity correction effects to control the trench etching process on 4H-SiC
Autor: Man Young Sung, Eun Sik Jung, Sinsu Kyoung
Publikováno v: Electronic Materials Letters. 13:368-372
Although trench gate and super-junction technology have micro-trench problems when applied to the SiC process due to the material characteristics. In this paper, area effects are analyzed from the test element group with various patterns and optical
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::37f684a726b9614cd36edf7f7f0f1756
https://doi.org/10.1007/s13391-017-1721-z
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5
Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures
Autor: Jung Hun Lee, In Ho Kang, Ki-Hyun Kim, Chang Heon Yang, Ye Hwan Kang, Eun Sik Jung
Publikováno v: Materials Science Forum. 858:733-736
In this paper, to verify implant effect characteristics variation by stripe type, grid type and circle type, the P+ implant patterning was studied. The result of two-dimensional simulation was controlled by adjusting the relative area of Schottky and
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d6441220db44b76285f0e0028e0233f
https://doi.org/10.4028/www.scientific.net/msf.858.733
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6
Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode
Autor: Eun-Sik Jung, Man Young Sung, Sinsu Kyoung
Publikováno v: Microelectronic Engineering. 154:69-73
To improve the high resistance and low breakdown voltage (BV) of a 4H-SiC Schottky barrier diode (SBD), the metal annealing process is conventionally used; this process stabilizes the Schottky barrier height (SBH). In this paper, we apply a post-meta
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4ae72b078a135e5813a9f3568f5e72c2
https://doi.org/10.1016/j.mee.2016.01.013
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7
An Analog Front-End IC Design for 320 $\times$ 240 Microbolometer Array Applications
Autor: Man Young Sung, Eun Sik Jung, Il Won Seo
Publikováno v: IEEE Transactions on Circuits and Systems II: Express Briefs. 62:1048-1052
We propose an analog front-end integrated circuit (IC) design for a readout IC (ROIC), which applies a fixed-voltage-bias sensing method with a capacitance transimpedance amplifier (CTIA) to an input stage in order to simplify the circuit structure o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::35c5885247ee5939f776159afbb5b9cc
https://doi.org/10.1109/tcsii.2015.2455391
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8
A Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier Diode
Autor: Sin Su Kyoung, Eun Sik Jung, Chang Heon Yang, Man Young Sung, Tai Young Kang
Publikováno v: Materials Science Forum. :588-591
To improve the high resistance and low Breakdown Voltage (BV) of 4H-SiC SBD, the metal annealing process is usually used to to stabilize SBH. We confirmed that post metal annealing after the chip process also stabilizes SBH by the post annealing expe
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b25dff266080d75f615a0dc337534609
https://doi.org/10.4028/www.scientific.net/msf.821-823.588
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9
Characteristic of On-resistance Improvement with Gate Pad Structure
Autor: Eun-Sik Jung, Chang Heon Yang, Woo-Taek Kim, Ye-Hwan Kang, Tae-Su Park, Won-Young Yoo
Publikováno v: Journal of the Korean Institute of Electrical and Electronic Material Engineers. 28:218-221
Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. In this study we hav
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a918c3635e63024c662bcc8b9d3112b0
https://doi.org/10.4313/jkem.2015.28.4.218
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10
Properties of Reducing On-resistance for JFET Region in Power MOSFET by Double Ion Implantation
Autor: Eun-Sik Jung, Tae-Su Park, Jeong-Han Kim, Ki-Hyun Kim, Chang Heon Yang
Publikováno v: Journal of the Korean Institute of Electrical and Electronic Material Engineers. 28:213-217
Device model parameters are very important for accurate estimation of electrical performances in devices, integrated circuits and their systems. There are a large number of methods for extraction of model parameters in power MOSFETs. For high efficie
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d5e5dac8340781f03efc4602aef438b0
https://doi.org/10.4313/jkem.2015.28.4.213
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