Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Eun-Seong Yu"'
Publikováno v:
Electronics Letters, Vol 59, Iss 19, Pp n/a-n/a (2023)
Abstract This paper delves into a structural modification of dual‐gate oxide thin film transistor (TFT). Diverging from the conventional dual‐gate TFT structure, the authors’ approach connects the bottom and top gate electrodes, effectively env
Externí odkaz:
https://doaj.org/article/7d464db5ba55469f9fd6cde86278685f
Autor:
Yeong Jo Baek, In Hye Kang, Sang Ho Hwang, Ye Lin Han, Min Su Kang, Seok Jun Kang, Seo Gwon Kim, Jae Geun Woo, Eun Seong Yu, Byung Seong Bae
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor’s channel as well as the gate electrode. After definition of
Externí odkaz:
https://doaj.org/article/6f7df80b54b44a8f92de897acee23ced
Autor:
In Hye Kang, Sang Ho Hwang, Young Jo Baek, Seo Gwon Kim, Ye Lin Han, Min Su Kang, Jae Geun Woo, Jong Mo Lee, Eun Seong Yu, Byung Seong Bae
Publikováno v:
ACS Omega, Vol 6, Iss 4, Pp 2717-2726 (2021)
Externí odkaz:
https://doaj.org/article/1ad9b77b8d0e4fab9cfa9702203a20cf
Autor:
Eun Seong Yu, Seung Gyun Kim, Seo Jin Kang, Hyuk Su Lee, Jong Mo Lee, Seung Jae Moon, Byung Seong Bae
Publikováno v:
Electronic Materials Letters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13d3252c0077327a7d441f8be7c80b8c
https://doi.org/10.1007/s13391-023-00431-6
https://doi.org/10.1007/s13391-023-00431-6
Autor:
Hyuck-Su Lee, Seo-Jin Kang, Jae-Geun Woo, Eun-Seong Yu, Chan-Min Jeong, Min-Seong Kim, Jong-Mo Lee, Byung-Seong Bae
Publikováno v:
Journal of the Institute of Electronics and Information Engineers. 59:23-31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1dfc8ffb1d9cb1fa5886c88f05bb2dd
https://doi.org/10.5573/ieie.2022.59.3.23
https://doi.org/10.5573/ieie.2022.59.3.23
Publikováno v:
2022 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479ac4349acf6f187f2b982df1253c30
https://doi.org/10.1109/icce-asia57006.2022.9954783
https://doi.org/10.1109/icce-asia57006.2022.9954783
Publikováno v:
SID Symposium Digest of Technical Papers. 53:1134-1136
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::691e0d3134358e97596bb7894ec2c283
https://doi.org/10.1002/sdtp.15701
https://doi.org/10.1002/sdtp.15701
Publikováno v:
SID Symposium Digest of Technical Papers. 53:1103-1105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9cb3ddd03ce3eb92183126fe3160694
https://doi.org/10.1002/sdtp.15693
https://doi.org/10.1002/sdtp.15693
Low voltage oxide thin-film transistors (TFTs) operating below 1.0 V were developed using a high dielectric constant tantalum oxide produced by thermal oxidation. Thermal oxidation was carried out at 400, 500, and 600 °C under an oxygen atmosphere.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::179ce70686a14741e6c868a7e89412f5
https://doi.org/10.21203/rs.3.rs-1903056/v1
https://doi.org/10.21203/rs.3.rs-1903056/v1
Publikováno v:
Electronics; Volume 11; Issue 4; Pages: 519
The integration of a scan drive circuit is required for flexible and stretchable displays because a rigid scan driver IC is not flexible and stretchable. In this study, decoder-type scan drivers were developed using amorphous IGZO thin-film transisto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1eff85223c6b6c0e6773bb5a321c760c