Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Eun Suck Choi"'
Publikováno v:
Microelectronic Engineering. 198:98-102
With continued advances in semiconductor devices below 10 nm, the required specification for ultraclean wafer surfaces (i.e., achieving metal contamination 95% in all conditions because it reacted with both the chelating agents and HF.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::589820e11987fb79411e25424b2d7bfc
https://doi.org/10.1016/j.mee.2018.06.012
https://doi.org/10.1016/j.mee.2018.06.012
Autor:
Jin-Goo Park, Hyun-Tae Kim, Hee-Jin Song, Dong-Hwan Lee, Sung-Hae Jang, Jae-Hwan Yi, Eun-Suck Choi
Publikováno v:
ECS Transactions. 80:249-256
With continued advances in logic devices below 10 nm design rule, the required specification for ultraclean wafer surface becomes very challenging to achieve zero defects in particles below 20 nm and lower than 0.5X1010 atoms/cm2 metal ions on the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51e4e76d5f7c667364184418907ab559
https://doi.org/10.1149/08002.0249ecst
https://doi.org/10.1149/08002.0249ecst
Autor:
In Jung Kim, Bong-Woo Kim, Jin-Goo Park, Bong-Kyun Kang, Eun-Suck Choi, Ahmed Busnaina, Seung-Ho Lee, Takeshi Hattori
Publikováno v:
ECS Transactions. 25:273-279
The preparation of ultra clean silicon surface demands a higher level surface conditioning and less damage/ etching of patterns and substrates. The conventional RCA cleaning chemicals have been applied in batch type cleaning process. As a result, not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12ff16b296a027f9661883fa4754094a
https://doi.org/10.1149/1.3202663
https://doi.org/10.1149/1.3202663
Autor:
Eun-Suck Choi, So-Ik Bae
Publikováno v:
Journal of the Korean Ceramic Society. 44:98-102
The stability of slurry and removal rate during recycling of colloidal silica slurry was evaluated in silicon wafer polishing. The particle size distribution, pH, and zeta potential were measured to investigate the stability of colloidal silica. Larg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc35318558fa432c6e4d992200857aa8
https://doi.org/10.4191/kcers.2007.44.2.098
https://doi.org/10.4191/kcers.2007.44.2.098
Publikováno v:
Chemical Vapor Deposition. 9:321-325
Platinum thin film collectors were deposited onto p-type Si(100) planar and trench substrates by liquid-delivery metal-organic (LD-MO) CVD using Pt(EtCp)Me 3 , Pt(C 2 H 5 C 5 H 4 )(CH 3 ) 3 , for microbatteries. The resistivity and root-mean-square (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4953cc950af208b3b0830dd8ade9fb6
https://doi.org/10.1002/cvde.200306268
https://doi.org/10.1002/cvde.200306268
Publikováno v:
Integrated Ferroelectrics. 55:877-885
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80e71e82a4329d5de9c66ec5e8929c17
https://doi.org/10.1080/10584580390259335
https://doi.org/10.1080/10584580390259335
Publikováno v:
Integrated Ferroelectrics. 55:877-885
(Ba0.5Sr0.5)TiO3 (BST) thin films were deposited by pulsed laser deposition (PLD) and investigated as a function of Ni dopant concentration in low and high frequency regions. In low frequency region ( 1 GHz), the frequency tunability range at center
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9c73b80f4165793d3050c6f56e0358e
https://doi.org/10.1080/714040740
https://doi.org/10.1080/714040740
Publikováno v:
Chemical Vapor Deposition. 8:221-225
SrBi 2 Ta 2 O 9 (SBT) thin films were deposited onto Pt/Ti/SiO 2 /Si substrates by liquid-delivery metal-organic (MO) CVD using Sr[Ta(OC 2 H 5 ) 5 (OC 2 H 4 OCH 3 )] 2 and Bi(C 6 H 5 ) 3 precursors. The film composition was primarily controlled by va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f14e59ac7c1e1c48890912a136ed775
https://doi.org/10.1002/1521-3862(20020903)8:5<221::aid-cvde221>3.0.co
https://doi.org/10.1002/1521-3862(20020903)8:5<221::aid-cvde221>3.0.co
Publikováno v:
Integrated Ferroelectrics. 47:31-40
(Ba,Sr)RuO 3 (BSR) electrodes were deposited on n-type Si (100) substrates by liquid-delivery metalorganic chemical vapor deposition (LDMOCVD) and their stability in a hydrogen ambient was investigated. BSR films showed the structural and morphologic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eaa01f13530ab22ecb7b4a5b90e6140
https://doi.org/10.1080/713718271
https://doi.org/10.1080/713718271
Publikováno v:
Ferroelectrics. 271:111-116
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2b0bf0d94df864d442b2810a2094c73
https://doi.org/10.1080/713716224
https://doi.org/10.1080/713716224