Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Eun Jung Yun"'
Autor:
Hyae Jin Kim, Soeun Jeon, Hyeon Jeong Lee, Jaeho Bae, Hyun-Su Ri, Jeong-Min Hong, Sung In Paek, Seul Ki Kwon, Jae-Rin Kim, Seungbin Park, Eun-Jung Yun
Publikováno v:
Korean Journal of Anesthesiology, Vol 76, Iss 6, Pp 627-639 (2023)
Background We investigated the effects of sevoflurane exposure on the expression of matrix metalloproteinase (MMP), expression and ablation of natural killer group 2, member D (NKG2D) ligands (UL16-binding proteins 1–3 and major histocompatibility
Externí odkaz:
https://doaj.org/article/586e052a425243e49c6156ad8835295d
Autor:
Hyae Jin Kim, Soeun Jeon, Hyeon Jeong Lee, Jaeho Bae, Hyun-Su Ri, Jeong-Min Hong, Sung In Paek, Seul Ki Kwon, Jae-Rin Kim, Seungbin Park, Eun-Jung Yun
Publikováno v:
Korean Journal of Anesthesiology; Dec2023, Vol. 76 Issue 6, p627-639, 13p
Publikováno v:
Journal of the Korean Society of International Agricultue. 29:160-171
Comparison of the Perception of Meals and Nutrition Knowledge in General and Vocational High Schools
Autor:
Eun-Jung Yun, Hae Young Chung
Publikováno v:
Journal of the Korean Society of Food Science and Nutrition. 40:1244-1255
The purpose of this study was to compare the perception of meals and nutrition knowledge among high school students in Seoul. A survey was carried out on 548 male/female students in general and vocational high schools. The general high school student
Autor:
null Min-Sang Kim, null Weon Wi Jang, null Ji-Myoung Lee, null Sung-Min Kim, null Eun-Jung Yun, null Keun-Hwi Cho, null Sung-Young Lee, null In-Hyuk Choi, null Yong, null Jun-Bo Yoon, null Dong-Won Kim, null Donggun Park
Publikováno v:
2007 International Semiconductor Device Research Symposium.
As design rule is scaled down in complementary metal-oxide-semiconductor (CMOS) device, the several disadvantages based on electric field effect in CMOS device were emerged such as short channel effect, junction leakage and gate oxide leakage current
Autor:
Yong Lack Choi, Ho Ju Song, Dong-Won Kim, Sung In Hong, Donggun Park, Eun Jung Yun, Na-Young Kim, Hyun Jun Bae, Chang Woo Oh, Sung Hwan Kim
Publikováno v:
2007 IEEE International SOI Conference.
In this study, we compared sensing margin according to the back gate bias and body doping concentration. We achieved large sensing margin of 62 uA/um at LG = 87 run and demonstrated sensing margin of 45 uA/um with LG = 47 nm that is the smallest devi
Autor:
Sung-young Lee, In-Hyuk Choi, Dong-Won Kim, Eun Jung Yun, Bork Kyoung Park, Sung Min Kim, Donggun Park, Ji-Myoung Lee, Min Sang Kim
Publikováno v:
2007 IEEE International Conference on Integrated Circuit Design and Technology.
We compared electrical characteristics of TBCFET (Triple-Bridge-Channel MOSFET), MBCFET (Multi-Bridge-Channel MOSFET) and SBCFET (Single-Bridge-Channel MOSFET) with sub-20 nm gates. TBCFET is suitable for low-power application with 2.9 mA/um of on-st
Publikováno v:
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
We demonstrate multi-bridge-channel MOSFET (MBCFET) with new gate structure on bulk Si wafer. Sub 25nm MBCFET shows excellent transistor characteristics, such as 750,000 times on/off current ratio and 3.61mA/mum drive current at 4.8nA/mum of off-stat
Publikováno v:
2002 IEEE Nuclear Science Symposium Conference Record.
Amorphous selenium (a-Se) has been proved to have excellent detective quantum efficiency, which suggests that a-Se would provide good image quality that is equivalent to or better than conventional film. We implemented a simulation model using Monte
Autor:
Eun Jung Yun, Sung-Young Lee, Min Sang Kim, Sung Min Kim, Inhyuk Choi, Jimyoung Lee, Bork Kyoung Park, Dong-Won Kim, Donggun Park
Publikováno v:
2007 IEEE International Conference on Integrated Circuit Design & Technology; 2007, p1-4, 4p