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Publikováno v:
Journal of the Korean Physical Society. 55:1022-1025
Interfacial layers of Hf-silicate films grown on Si substrates by using atomic layer deposition and wet etched with buered hydrogen fluoride were investigated. After etching the Hf-silicate film, the remaining gate dielectric is an interfacial layer,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07ec7681b55b6a41db0c2a671c54c117
https://doi.org/10.3938/jkps.55.1022
https://doi.org/10.3938/jkps.55.1022
