Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Euiyeon Hong"'
Autor:
Sungwoo Jun, Hyunjun Choi, Dae Hwan Kim, Woojoon Kim, Inseok Hur, Euiyeon Hong, Jaewook Lee, Choon Hyeong Jo, Yun Hyeok Kim, Seonwook Hwang, Dong Myong Kim, Hagyoul Bae, Hyojoon Seo, Daeyoun Yun, Hyun Kwang Jeong
Publikováno v:
IEEE Electron Device Letters. 33:1138-1140
We propose a modified conductance method for extraction of the subgap density of states (DOS) in amorphous indium-gallium-zinc oxide thin-film transistors by using the measured capacitance and conductance through the capacitance-voltage (C-V) measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9574a7778647cf956b3eb8ebf5db3bd
https://doi.org/10.1109/led.2012.2198870
https://doi.org/10.1109/led.2012.2198870
Autor:
Daeyoun Yun, Euiyeon Hong, Minkyung Bae, Dong Myong Kim, Ja Sun Shin, Jaeman Jang, Dae Hwan Kim, Jieun Lee, Hagyoul Bae
Publikováno v:
IEEE Electron Device Letters. 32:1206-1208
A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor dm/dVGS instead of the subthreshold slope or the body factor itself. The DBT is independent of the thresh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22ae1de9be255649904ac323b26a5c0c
https://doi.org/10.1109/led.2011.2160709
https://doi.org/10.1109/led.2011.2160709