Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Euing Lin"'
Autor:
N.H. Yang, Jeffrey M. Lauerhaas, Wesley Yu, Euing Lin, Ted Ming-Lang Guo, Don Kahaian, J.Y. Wu, J.F. Lin, Jeffery W. Butterbaugh, Chin-Cheng Chien, Anthony S. Ratkovich
Publikováno v:
Solid State Phenomena. 219:97-100
A single wafer silicon nitride (SiN) selective etch process with an etch rate greater than 80A/min of low-pressure chemical vapor deposited (LPCVD) SiN has been developed. Previous work with a similar single wafer system utilized a mixture of sulfuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e85619a9a57f6ee7206b7d8b6668d801
https://doi.org/10.4028/www.scientific.net/ssp.219.97
https://doi.org/10.4028/www.scientific.net/ssp.219.97
Autor:
J.Y. Wu, Wesley Yu, J.F. Lin, Euing Lin, A.N. Other, N.H. Yang, Alessandro Baldaro, Ted Ming-Lang Guo, Kenneth M. Robb, M.H. Chang, Chin-Cheng Chien
Publikováno v:
Solid State Phenomena. 219:78-80
As the demand for greater speed in semiconductor devices continues, a typical method of increasing charge mobility is to maximise the silicon strain at the depletion region in p-type transistors through the implementation of “Sigma Cavity” struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a389d1e0ace0c4a64f33734badc9d181
https://doi.org/10.4028/www.scientific.net/ssp.219.78
https://doi.org/10.4028/www.scientific.net/ssp.219.78