Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Euijun Cha"'
Autor:
Donguk Lee, Euijun Cha, Jaehyuk Park, Changhyuck Sung, Kibong Moon, Solomon Amsalu Chekol, Hyunsang Hwang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 250-253 (2018)
Oscillatory neural networks with nano-oscillators and synapse devices are a promising alternative to implement neuromorphic systems owing to its fast recognition speed and low power consumption. In this paper, we demonstrate a compact frequency stora
Externí odkaz:
https://doaj.org/article/4d5250a0d9aa46a7919fcb945d796027
Autor:
Jaehyuk Park, Tobias Hadamek, Agham B. Posadas, Euijun Cha, Alexander A. Demkov, Hyunsang Hwang
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by
Externí odkaz:
https://doaj.org/article/2d115af51862416889643806af10ea45
Autor:
Myonglae Chu, Hyunsang Hwang, Jaesung Park, Euijun Cha, Byung-Geun Lee, Sang Ho Oh, Kyungjoon Baek, Sang-Gyun Gi, Kibong Moon
Publikováno v:
IEEE Electron Device Letters. 37:1067-1070
This letter presents an investigation of analog synapse characteristics of a PCMO-based interface switching device with varying electrode materials. In comparison with the filamentary switching device having only 1-b storage and variability issues, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f22862298569d27efaeb6789da2a77de
https://doi.org/10.1109/led.2016.2583545
https://doi.org/10.1109/led.2016.2583545
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:4758-4761
Reliability characteristics (retention and endurance) of RRAM are critical for its practical realization and need to be improved. In this work, we confirmed the trade-off between retention and endurance by using various top electrode thickness condit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c46a63499061f209771cb9f7622e16d
https://doi.org/10.1166/jnn.2016.12250
https://doi.org/10.1166/jnn.2016.12250
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P641-P643
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8208972932ec5310ab431af737b3e0f
https://doi.org/10.1149/2.0311709jss
https://doi.org/10.1149/2.0311709jss
Autor:
Hyunsang Hwang, Jun-tai Kim, Yoongon Kim, Chan Gyung Park, Euijun Cha, Boknam Chae, S.Y. Lee, Lee Juyeong
Publikováno v:
Micron. 79:101-109
Threshold switching is a phenomenon where the resistivity of an insulating material changes and the insulator exhibits metallic behavior. This could be explained by phase transformation in oxide materials; however, this behavior is also seen in amorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9f595b93037b7b8248b79ffd539b3ea
https://doi.org/10.1016/j.micron.2015.07.015
https://doi.org/10.1016/j.micron.2015.07.015
Publikováno v:
Solid-State Electronics. 104:70-74
The effect of AC pulse engineering on the nonlinearity and reliability of selectorless resistive random access memory was investigated in order to implement a high-density cross-point array. Applying an AC pulse bias can induce current overshoot duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00f0f4c615d48197373b3f508f959d5e
https://doi.org/10.1016/j.sse.2014.11.013
https://doi.org/10.1016/j.sse.2014.11.013
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8f49669354d5a7a0b7f988ecba5a2eb
https://doi.org/10.1038/s41598-017-04529-4
https://doi.org/10.1038/s41598-017-04529-4
Autor:
Jaehyuk, Park, Tobias, Hadamek, Agham B, Posadas, Euijun, Cha, Alexander A, Demkov, Hyunsang, Hwang
Publikováno v:
Scientific Reports
NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0279a22f8e6aa30869090702b3bd41ce
https://pubmed.ncbi.nlm.nih.gov/28642471
https://pubmed.ncbi.nlm.nih.gov/28642471
Publikováno v:
Solid-State Electronics. 102:42-45
In this paper, we demonstrated different filament formation abilities of two metal oxide layers for reliable switching uniformity of resistive random access memory (ReRAM). We observed, for the first time, set operation exhibited stepwise operation i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6195ec94ec63ff0b388838518185340c
https://doi.org/10.1016/j.sse.2014.06.011
https://doi.org/10.1016/j.sse.2014.06.011