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Autor:
Tae-Hyun Kil, Ju-Won Yeon, Hyo-Jun Park, Moon-Kwon Lee, Eui-Cheol Yun, Min-Woo Kim, Sang-Min Kang, Jun-Young Park
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 1030-1033 (2024)
In this study, low-temperature deuterium annealing (LTDA) at 300 °C is proposed to enhance both the performance and reliability of silicon-based high-k metal gate (HKMG) MOSFETs. A comparative study with hydrogen (H2) annealing under identical condi
Externí odkaz:
https://doaj.org/article/e5445f0aec104a1a8d3c76b41220648b
