Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Eui Joong Shin"'
Autor:
Gyusoup Lee, Jungyeop Oh, Eui Joong Shin, Seongho Kim, Youngkeun Park, Min Ju Kim, Sung-Yool Choi, Byung Jin Cho
Publikováno v:
IEEE Electron Device Letters. 44:528-531
Publikováno v:
IEEE Electron Device Letters. 43:1375-1378
Autor:
Tae In Lee, Min Ju Kim, Eui Joong Shin, Gyusoup Lee, Jaejoong Jeong, Yun Hee Lee, Jung Hoon Lee, Jaeduk Lee, Byung Jin Cho
Publikováno v:
IEEE Electron Device Letters. 43:342-345
Autor:
Tae In Lee, Byung Jin Cho, Min Ju Kim, Hyun Jun Ahn, Rino Choi, Eui Joong Shin, Wan Sik Hwang, Hyun-Young Yu, Manh-Cuong Nguyen
Publikováno v:
IEEE Electron Device Letters. 40:1350-1353
We report on the impact of H2 high pressure annealing (H2-HPA) on a Y-doped ZrO2 (Y-ZrO2)/GeOx/Ge gate stack. In this paper, compared to conventional forming gas annealing (FGA), the H2-HPA increased the k-value of the Y-doped ZrO2 gate dielectric to
Autor:
Eui Joong Shin, Sung Won Shin, Seung Hwan Lee, Byung Jin Cho, Wan Sik Hwang, Hyun Jun Ahn, Hyun Yong Yu, Tae In Lee, Min Ju Kim
Publikováno v:
IEEE Electron Device Letters. 40:502-505
An advanced gate stack of Y-doped ZrO2 high-k dielectric is demonstrated for Ge MOSFETs. ZrO2 is implemented due to its high-permittivity (high-k) value, and additional Y is doped into the ZrO2 to enhance interfacial properties. The gate stack of ZrO
Autor:
Tae In Lee, Eui Joong Shin, Byung Jin Cho, Jae Hwan Kim, Hyun Jun Ahn, Wan Sik Hwang, Seung Hwan Lee, Jae-Duk Lee, Sung Won Shin, Min Ju Kim
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We demonstrate for the first time that the use of an anti-ferroelectric film for the blocking layer of a charge trap flash (CTF) device significantly improves memory performance. The CTF device with the anti-ferroelectric blocking layer shows a large
Autor:
Jaejoong Jeong, Changhyeon Lee, Byung Jin Cho, Tae In Lee, Min Ju Kim, Wan Sik Hwang, Seong Ho Kim, Sung Gap Im, Eui Joong Shin
Publikováno v:
Organic Electronics. 96:106250
The quality of the dielectric/organic semiconductor interface is a critical issue, because it determines the charge transport properties in organic thin-film transistors (OTFTs). High-k organic-inorganic hybrid films have received considerable attent
Autor:
Wan Sik Hwang, Sung Gap Im, Changhyeon Lee, Jaejoong Jeong, Byung Jin Cho, Junhwan Choi, Tae In Lee, Eui Joong Shin, Seong Ho Kim, Min Ju Kim
Publikováno v:
Advanced Functional Materials. 31:2103291
Autor:
Tae In Lee, Wan Sik Hwang, Jaejoong Jeong, Sung Gap Im, Seong Ho Kim, Eui Joong Shin, Min Ju Kim, Byung Jin Cho, Changhyeon Lee
Publikováno v:
Advanced Electronic Materials. 7:2001197
Publikováno v:
Advanced Materials Technologies. 3:1700197