Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Eugeni Garcia¿Moreno"'
Autor:
Josep L. Rosselló, Eugeni Isern, Miquel L. Alomar, Víctor Martínez-Moll, Eugeni Garcia-Moreno, Antoni Morro, Christiam F. Frasser, Miquel Roca, Antoni Oliver, Vicent Canals
Publikováno v:
Integrated Computer-Aided Engineering. 24:351-365
Publikováno v:
IEEE Transactions on Nuclear Science. 60:4281-4288
A new dosimeter for total ionizing dose that is based on a floating gate MOSFET is presented. The chip incorporates a reference standard MOSFET for temperature compensation and front-end electronics to provide manageable output signals. The floating
Publikováno v:
International Journal of Measurement Technologies and Instrumentation Engineering. 2:1-16
An off-line reconfiguration method is proposed for pipelined ADCs to improve their fabrication yield. Some nonlinearities generated by op amps in pipelined ADC stages depend on their bandwidth, while their equivalent input-referred errors depend on t
Autor:
Oscar Calvo, R. García, Eugeni Garcia-Moreno, Benjamin Iniguez, Rodrigo Picos, Magali Estrada
Publikováno v:
Solid-State Electronics. 51:683-690
Precise extraction of transistor model parameters is of much importance for modeling and at the same time a difficult and time consuming task. Methods for parameter extraction can rely on purely mathematical basis, calling for intensive use of comput
Publikováno v:
International Journal of Energy Research. 28:65-80
The world of energy has lately experienced a revolution, and new rules are being defined. The climate change produced by the greenhouse gases, the inefficiency of the energy system or the lack of power supply infrastructure in most of the poor countr
Publikováno v:
Microelectronics Journal. 34:919-926
In this paper, we present a built-in current sensor to test operational amplifiers that takes advantage of previous results where the negative supply current has been taken as the test observable using the Oscillation-test technique. The sensor is ap
Autor:
Mohamed Moner, Al Chawa, Pedro Garcia-Fernandez, Francisco Jiménez-Molinos, Eugeni Garcia-Moreno, Juan Bautista Roldán, Rodrigo Picos
Publikováno v:
Radioengineering, Vol 24, Iss 2, Pp 420-424 (2015)
Radioengineering. 2015 vol. 24, č. 2, s. 420-424. ISSN 1210-2512
Digibug. Repositorio Institucional de la Universidad de Granada
instname
Radioengineering. 2015 vol. 24, č. 2, s. 420-424. ISSN 1210-2512
Digibug. Repositorio Institucional de la Universidad de Granada
instname
We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si-n+ structures, and have also developed an analytical model for their electrical chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc53352df004aae31fb0cff64d3efc0e
http://hdl.handle.net/10481/36994
http://hdl.handle.net/10481/36994
Publikováno v:
ECS Meeting Abstracts. :2048-2048
Memristors, which are the fourth kind of passive element, along with resistors, inductances and capacitors, were first explicitly described in [1]. Their main characteristics are: (i) if there is no voltage across its terminals, there is no current;
Publikováno v:
2008 7th International Caribbean Conference on Devices, Circuits and Systems.
A good MOSFET compact model has to fulfill a whole collection of requirements, concerning the quality of its mathematical approach, and the number of physical effects considered. Those requirements can be checked by applying a battery of tests develo
Publikováno v:
2006 International Caribbean Conference on Devices, Circuits and Systems.
In this paper we present a new tool to improve analog circuits test. This tool is based on measuring not only frequency or voltage, but also the transferred charge during a period while the circuit under test is configured as an oscillator. To prove