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pro vyhledávání: '"Eugene O. Zhuravlev"'
Autor:
Yuri N. Parkhomenko, Aleksandr G. Belov, Elena V. Molodtsova, Roman Yu. Kozlov, Svetlana S. Kormilitsina, Eugene O. Zhuravlev
Publikováno v:
Modern Electronic Materials, Vol 8, Iss 4, Pp 165-171 (2022)
The concentrations of conduction electrons in n-GaSb at 295 and 77 K have been calculated taking into account the non-parabolic deviation of the conduction band shape. We show that at T = 295 K the concentration of heavy electrons in the L-valley of
Externí odkaz:
https://doaj.org/article/751bf4f187544ba5a271c72f77da3ae3
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 2, Pp 73-78 (2021)
Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches.
Externí odkaz:
https://doaj.org/article/101f3ebc0ecb45bc8621c949723eb041