Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Eugene N. Mokhov"'
Publikováno v:
Materials Science Forum. 897:7-10
The distribution of extended defects in silicon carbide (SiC) crystals grown on profiled seeds by the sublimation (physical vapor transport) method has been studied by optical microscopy in combination with chemical etching. It is established that fr
Autor:
Yu.N. Makarov, Sergei Orlinskii, D. O. Tolmachev, Eugene N. Mokhov, P. G. Baranov, N. G. Romanov, Vladimir A. Khramtsov, Georgy Mamin, V. A. Soltamov, A. S. Gurin, Alexandra A. Soltamova, I. V. Ilyin
Publikováno v:
Applied Magnetic Resonance. 44:1139-1165
The results of studies of shallow donors and deep-level color centers in bulk AlN crystals are presented. Two shallow donors (presumably oxygen located on the nitrogen site and carbon located on the aluminum site) are suggested to exhibit the DX-rela
Autor:
Eugene N. Mokhov, Sergey S. Nagalyuk
Publikováno v:
Materials Science Forum. :60-64
The distribution of extended defects in silicon carbide (SiC) crystals grown on profiled seeds by the sublimation (physical vapor transport) method has been studied by optical microscopy in combination with chemical etching. It is established that fr
Autor:
Eugene N. Mokhov, S. S. Nagalyuk
Publikováno v:
Technical Physics Letters. 37:999-1002
The distribution of extended defects in silicon carbide (SiC) crystals grown on profiled seeds by the sublimation sandwich method (physical vapor transport) has been studied by optical microscopy in combination with chemical etching. It is establishe
Publikováno v:
Physical Review B. 77
An electron paramagnetic resonance spectrum with axial symmetry along $c$ axis, spin $S=1∕2$ and strong hyperfine interaction with one carbon atom has been observed in neutron-irradiated and annealed $6H\text{\ensuremath{-}}\mathrm{Si}\mathrm{C}$,