Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Eugene N. Mokhov"'
Publikováno v:
Materials Science Forum. 897:7-10
The distribution of extended defects in silicon carbide (SiC) crystals grown on profiled seeds by the sublimation (physical vapor transport) method has been studied by optical microscopy in combination with chemical etching. It is established that fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::576bf8e294495bfb14df7f3058a1e3c5
https://doi.org/10.4028/www.scientific.net/msf.897.7
https://doi.org/10.4028/www.scientific.net/msf.897.7
Autor:
Yu.N. Makarov, Sergei Orlinskii, D. O. Tolmachev, Eugene N. Mokhov, P. G. Baranov, N. G. Romanov, Vladimir A. Khramtsov, Georgy Mamin, V. A. Soltamov, A. S. Gurin, Alexandra A. Soltamova, I. V. Ilyin
Publikováno v:
Applied Magnetic Resonance. 44:1139-1165
The results of studies of shallow donors and deep-level color centers in bulk AlN crystals are presented. Two shallow donors (presumably oxygen located on the nitrogen site and carbon located on the aluminum site) are suggested to exhibit the DX-rela
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ff07e5858275718165106db718d9853
https://doi.org/10.1007/s00723-013-0470-x
https://doi.org/10.1007/s00723-013-0470-x
Autor:
Eugene N. Mokhov, Sergey S. Nagalyuk
Publikováno v:
Materials Science Forum. :60-64
The distribution of extended defects in silicon carbide (SiC) crystals grown on profiled seeds by the sublimation (physical vapor transport) method has been studied by optical microscopy in combination with chemical etching. It is established that fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eeb768b7f8b9666fa6e7d5fb79219ba
https://doi.org/10.4028/www.scientific.net/msf.740-742.60
https://doi.org/10.4028/www.scientific.net/msf.740-742.60
Autor:
Eugene N. Mokhov, S. S. Nagalyuk
Publikováno v:
Technical Physics Letters. 37:999-1002
The distribution of extended defects in silicon carbide (SiC) crystals grown on profiled seeds by the sublimation sandwich method (physical vapor transport) has been studied by optical microscopy in combination with chemical etching. It is establishe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd96b9d89e0d7588c285b0cb90284843
https://doi.org/10.1134/s1063785011110095
https://doi.org/10.1134/s1063785011110095
Publikováno v:
Physical Review B. 77
An electron paramagnetic resonance spectrum with axial symmetry along $c$ axis, spin $S=1∕2$ and strong hyperfine interaction with one carbon atom has been observed in neutron-irradiated and annealed $6H\text{\ensuremath{-}}\mathrm{Si}\mathrm{C}$,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0be7bf82353c7ba9f1d077bdacb1c7a
https://doi.org/10.1103/physrevb.77.085120
https://doi.org/10.1103/physrevb.77.085120
Autor:
Soltamov, Victor, Ilyin, Ivan, Soltamova, Alexandra, Tolmachev, Daniel, Romanov, Nikolai, Gurin, Alexandr, Khramtsov, Vladimir, Mokhov, Eugene, Makarov, Yurii, Mamin, Georgy, Orlinskii, Sergei, Baranov, Pavel
Publikováno v:
Applied Magnetic Resonance; Oct2013, Vol. 44 Issue 10, p1139-1165, 27p
Selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
