Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Eugene N. Bryan"'
Publikováno v:
Carbon. 49:3332-3339
Highly symmetric ring-shaped field emission patterns were observed from broad-area flat cathodes prepared by growing a film of vertically aligned carbon nanotubes (CNTs) on TiN coated Si substrates. The images were obtained utilizing a luminescent sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe7f2e2726031f120840aa2292cb049
https://doi.org/10.1016/j.carbon.2011.04.020
https://doi.org/10.1016/j.carbon.2011.04.020
Publikováno v:
2010 3rd International Nanoelectronics Conference (INEC).
Electron emission from carbon materials has been based on two effects: field enhancement from conducting nanostructures and barrier lowering due to the negative electron affinity of diamond surfaces. Moreover, n-type doping with P and N can enable a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86fd246467f84c7792a54e1575fd306d
https://doi.org/10.1109/inec.2010.5424519
https://doi.org/10.1109/inec.2010.5424519
Autor:
Bin Li, Zhen Yao, Paul S. Ho, Zhiquan Luo, Eugene N. Bryan, Li Shi, Robert J. Nemanich, Yunyu Wang
Publikováno v:
Scopus-Elsevier
Carbon nanotubes (CNTs) have been grown by catalytical chemical vapor deposition (CCVD) with a thin iron layer as the catalyst. High surface tension metal, tantalum (Ta), and low surface tension, SiO2, have been deposited as the supporting layers bef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2487500b993d047157a608276524f472
https://doi.org/10.1557/proc-1017-dd01-04-ee01-04
https://doi.org/10.1557/proc-1017-dd01-04-ee01-04
Autor:
Eugene N. Bryan, Paul S. Ho, Zhen Yao, Bin Li, Yunyu Wang, Zhiquan Luo, Li Shi, Robert J. Nemanich
Publikováno v:
Journal of Applied Physics. 101:124310
A comparison study has been conducted on the formation of catalyst nanoparticles on a high surface tension metal and low surface tension oxide for carbon nanotube (CNT) growth via catalytic chemical vapor deposition (CCVD). Silicon dioxide (SiO2) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31a85416fec95c96b19a5421b8451d2a
https://doi.org/10.1063/1.2749412
https://doi.org/10.1063/1.2749412
Publikováno v:
Scopus-Elsevier
Wafer bonding of SiC and GaN may prove important in the formation of high power heterojunction devices. Results of bonding SiC (C or Si surface) onto GaN (Ga surface) are presented. The samples were n-type 6H SiC and epitaxial n-type 2H(wurzite) GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e7c1735808705d626b5520efacf52d5
http://www.scopus.com/inward/record.url?eid=2-s2.0-34249868460&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-34249868460&partnerID=MN8TOARS
