Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Eugene Iwaniczko"'
Autor:
Richard S. Crandall, Qing Wang, Y. Xu, M. R. Page, Eugene Iwaniczko, L. Roybal, Falah S. Hasoon
Publikováno v:
Thin Solid Films. 519:4527-4530
We study the effect on various properties of varying the intrinsic layer (i-layer) thickness of amorphous/crystalline silicon heterojunction (SHJ) solar cells. Double-side monocrystalline silicon (c-Si) heterojunction solar cells are made using hot-w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00d57e7e9e32b4c586347f5e446fe30f
https://doi.org/10.1016/j.tsf.2011.01.293
https://doi.org/10.1016/j.tsf.2011.01.293
Publikováno v:
ECS Transactions. 34:1129-1134
Light trapping plays an important role to achieve high short circuit current density (Jsc) and high efficiency for amorphous/crystalline Si heterojunction solar cells. Si heterojunction uses hydrogenated amorphous Si for emitter and back contact. Thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d2cad2d6f2d149f9055b2055801d338
https://doi.org/10.1149/1.3567725
https://doi.org/10.1149/1.3567725
Publikováno v:
ECS Transactions. 25:11-17
High efficiency crystalline Si heterojunction solar cells have been achieved with an independently-confirmed efficiency of 19.3% on a p-type silicon wafer. The hydrogenated amorphous silicon (a-Si:H) emitter and back contact were deposited using high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6c329c3d7e94b96d4d059a194e2b08a
https://doi.org/10.1149/1.3300416
https://doi.org/10.1149/1.3300416
Autor:
Kimon C. Palinginis, Shouvik Datta, Howard M. Branz, J. David Cohen, A. H. Mahan, Eugene Iwaniczko, Yueqin Xu
Publikováno v:
Thin Solid Films. 516:663-669
We evaluate and compare the electronic properties of hot-wire CVD deposited a-Si:H and a-Si,Ge:H films with those produced by the glow discharge (PECVD) method. A good indicator of film quality with respect to solar cell applications is the narrownes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f99ecc5c61a6939d234c858a8644eae2
https://doi.org/10.1016/j.tsf.2007.06.116
https://doi.org/10.1016/j.tsf.2007.06.116
Autor:
R. Bauer, A. Harv Mahan, Eugene Iwaniczko, Yueqin Xu, Qi Wang, Howard M. Branz, Charles W. Teplin, T.H. Wang, Matthew Page, David L. Young, Pauls Stradins, L. Roybal
Publikováno v:
Thin Solid Films. 516:743-746
Our research aiming to improve silicon photovoltaic materials and devices extensively utilizes hot-wire chemical vapor deposition (HWCVD). We have recently achieved 18.2% heterojunction silicon solar cells by applying HWCVD a-Si:H front and back cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8854603f938a0a620f5cf7d1d062b9c
https://doi.org/10.1016/j.tsf.2007.06.115
https://doi.org/10.1016/j.tsf.2007.06.115
Publikováno v:
Thin Solid Films. 501:284-287
Low substrate temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34b2bc7ccb95759bc54cf8d5d61458c3
https://doi.org/10.1016/j.tsf.2005.07.196
https://doi.org/10.1016/j.tsf.2005.07.196
Autor:
Mowafak Al-Jassim, Kim M. Jones, Eugene Iwaniczko, Qi Wang, Charles W. Teplin, Robert C. Reedy, Howard M. Branz
Publikováno v:
Journal of Crystal Growth. 287:414-418
Growth of 400 nm epitaxial silicon films on (1 0 0) silicon wafers at temperatures as low as 280 °C is demonstrated by use of a tantalum filament in hot-wire chemical vapor deposition. Systematic studies on the effects of substrate temperature and f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fec456cc27028890726d89249f4d8b6
https://doi.org/10.1016/j.jcrysgro.2005.11.055
https://doi.org/10.1016/j.jcrysgro.2005.11.055
Publikováno v:
Thin Solid Films. 430:208-211
We have developed a p-type, crystalline Si-based solar cell using hot-wire chemical vapor deposition (HWCVD) n-type microcrystalline Si to form an n-p junction (emitter). The CVD process was rapid and a low substrate temperature was used. The p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e64ad8d07722beb2ddc4e146a43c7a6c
https://doi.org/10.1016/s0040-6090(03)00112-3
https://doi.org/10.1016/s0040-6090(03)00112-3
Publikováno v:
Thin Solid Films. 430:212-215
Using two tungsten (W) filaments and a filament–substrate spacing of 3.2 cm, we have explored the deposition of microcrystalline silicon (μc-Si) solar cells, with the i-layer deposited at high deposition rates ( R d ), by the hot-wire CVD (HWCVD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e6bcbebdd4d8c191a47bb36c89e7102
https://doi.org/10.1016/s0040-6090(03)00113-5
https://doi.org/10.1016/s0040-6090(03)00113-5
Publikováno v:
Thin Solid Films. 430:192-196
Several a-Si:H and a-Si:D films prepared by hot-wire chemical vapor deposition have been examined by small-angle neutron scattering (SANS) to search for H non-uniformity in this material. The SANS measurements were supplemented by small-angle X-ray s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::258d86cb220d8bec300bd863d5db8505
https://doi.org/10.1016/s0040-6090(03)00109-3
https://doi.org/10.1016/s0040-6090(03)00109-3