Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Eugene Deyneka"'
Autor:
Jyothi Ambati, Albert A. Burk, Jeff Seaman, Chris Horton, Sumit Gangwal, Jianqiu Guo, Elif Balkas, Michael Dudley, Adrian Powell, Yuri I. Khlebnikov, Joseph John Sumakeris, Michael James Paisley, Valeri F Tsevtkov, R.T. Leonard, Andy McClure, M. O’Loughlin, Olek Kramarenko, Eugene Deyneka, Varad R. Sakhalkar
Publikováno v:
Materials Science Forum. 858:5-10
The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053b3c67667a0ddf22a99f7b8b86f646
https://doi.org/10.4028/www.scientific.net/msf.858.5
https://doi.org/10.4028/www.scientific.net/msf.858.5
Autor:
Valeri F Tsevtkov, Jianqiu Guo, Adrian Powell, Michael James Paisley, Robert Tyler Leonard, Eugene Deyneka, Jeff Seaman, Yu Yang, Michael Dudley, Yuri I. Khlebnikov, Elif Balkas, Joseph John Sumakeris
Publikováno v:
Materials Science Forum. 858:393-396
Definitive correlations are presented between specific types of dislocations identified via Synchrotron White Beam X-Ray Topography (SWBXRT) and identified via selective etching of 4H-SiC substrates. A variety of etch conditions and the results on di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cae526e8494e9312e75ec7f805db01ee
https://doi.org/10.4028/www.scientific.net/msf.858.393
https://doi.org/10.4028/www.scientific.net/msf.858.393
Autor:
Yuri I. Khlebnikov, Albert A. Burk, John W. Palmour, Dan Barnhardt, Paul Towner, Michael J. O'Loughlin, Eugene Deyneka, Denis Tsvetkov, Lara Garrett, Jeff Seaman
Publikováno v:
Materials Science Forum. :75-80
Initial results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10x100-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased areal throughput offered by this reactor and 150-mm diameter wafers, is intended to re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::899c7168e2ed625176008fd4363b6e44
https://doi.org/10.4028/www.scientific.net/msf.717-720.75
https://doi.org/10.4028/www.scientific.net/msf.717-720.75
Autor:
Adrian Powell, Calvin H. Carter, Joseph John Sumakeris, Cengiz Balkas, Cem Basceri, H. McD. Hobgood, R.T. Leonard, D.P. Malta, I.I. Khlebnikov, Yuri I. Khlebnikov, Michael James Paisley, Elif Berkman, Albert A. Burk, M.F. Brady, Vijay Balakrishna, Eugene Deyneka, Valeri F. Tsvetkov, Michael J. O'Loughlin
Publikováno v:
Materials Science Forum. :3-6
Availability of high-quality, large diameter SiC wafers in quantity has bolstered the commercial application of and interest in both SiC- and nitride-based device technologies. Successful development of SiC devices requires low defect densities, whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3720050cb306432f06eaa21c2e31416b
https://doi.org/10.4028/www.scientific.net/msf.615-617.3
https://doi.org/10.4028/www.scientific.net/msf.615-617.3
Autor:
Adrian Powell, Robert Tyler Leonard, Jason Ronald Jenny, Calvin H. Carter, Michael James Paisley, M.F. Brady, R. Zilli, Yuri I. Khlebnikov, Vijay Balakrishna, Eugene Deyneka, I.I. Khlebnikov, H. McD. Hobgood, Valeri F. Tsvetkov, D.P. Malta, Cem Basceri
Publikováno v:
Materials Science Forum. :7-10
Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero micropipe density 100 mm 4HN-SiC wafers. Combined techniques of KOH etching and cross-polarizer inspections wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dbd8f36b6ea0c79e01838ced136b81b
https://doi.org/10.4028/www.scientific.net/msf.600-603.7
https://doi.org/10.4028/www.scientific.net/msf.600-603.7