Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Eugène Bertin"'
Autor:
Polyxeni Tsoulka, Eugène Bertin, Eric Gautron, Daniel Lincot, Nicolas Barreau, Antoine Létoublon, Olivier Durand, Charles Cornet
Publikováno v:
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2021, 233, pp.111385. ⟨10.1016/j.solmat.2021.111385⟩
Solar Energy Materials and Solar Cells, 2021, 233, pp.111385. ⟨10.1016/j.solmat.2021.111385⟩
Solar Energy Materials and Solar Cells, Elsevier, 2021, 233, pp.111385. ⟨10.1016/j.solmat.2021.111385⟩
Solar Energy Materials and Solar Cells, 2021, 233, pp.111385. ⟨10.1016/j.solmat.2021.111385⟩
International audience; In this study, the epitaxial growth of co-evaporated Cu(In,Ga)Se2 films (CIGSe) onto GaP/Si(001) pseudo-substrates, where the GaP thin layer is epitaxially grown by Molecular Beam Epitaxy (MBE), is investigated. Extensive stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c33fee53601ec63b921f7c1c0a92c78
https://hal.archives-ouvertes.fr/hal-03361009
https://hal.archives-ouvertes.fr/hal-03361009
Autor:
Eric Gautron, Nicolas Barreau, Amelle Rebai, Jackson Lontchi, Antoine Létoublon, Alexandre Crossay, Eugène Bertin, Charles Cornet, Daniel Lincot, Olivier Durand
Publikováno v:
Proc. SPIE
SPIE Photonics West-OPTO 2021
SPIE Photonics West-OPTO 2021, Mar 2021, Online Only, United States. pp.1168721, ⟨10.1117/12.2591986⟩
SPIE Photonics West-OPTO 2021
SPIE Photonics West-OPTO 2021, Mar 2021, Online Only, United States. pp.1168721, ⟨10.1117/12.2591986⟩
International audience; We propose to explore tandem junctions associating single crystalline silicon bottom cell (Eg = 1.12 eV) and wide bandgap (1.7 eV) CIGS top cell, using GaP intermediate layer. Our purpose is to grow CIGS films under epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfa4103bc6e61f0ee4e5b08841ea327e
https://hal.science/hal-03392186
https://hal.science/hal-03392186