Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Euan McBrearty"'
Publikováno v:
Novel In-Plane Semiconductor Lasers XX.
A GaAs/AlGaAs distributed feedback semiconductor (DFB) laser with a laterally-coupled grating is demonstrated at a wavelength of 780.24 nm with an output power up to 60 mW. A mode expander and aluminum-free active layers have been used in the materia
Autor:
Marc Sorel, Eugenio Di Gaetano, Szymon Stanczyk, Steffan Gwyn, Thomas J. Slight, Martin Knapp, Euan McBrearty, Piotr Perlin, Mike Leszczynski, Scott Watson, Edik U. Rafailov, Szymon Grzanka, S. P. Najda, Kevin E. Docherty, Douglas J. Paul, M. Haji, Amit Yadav, Anthony Kelly
Publikováno v:
ICTON
There is an ever-growing need for compact sources which can be used for the cooling process in high accuracy atomic clocks. Current systems make use of large, expensive lasers which are power-hungry and often require frequency doubling in order to hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f962896c8b6148b9bb7af308d1af97b
https://eprints.gla.ac.uk/223703/2/223703.pdf
https://eprints.gla.ac.uk/223703/2/223703.pdf
Autor:
Martin, Sinclair, Kevin, Gallacher, Marc, Sorel, Joseph C, Bayley, Euan, McBrearty, Ross W, Millar, Stefan, Hild, Douglas J, Paul
Publikováno v:
Optics express. 28(3)
A silicon nitride micro-ring resonator with a loaded Q factor of 1.4 × 10
A distributed feedback GaAs-based semiconductor laser with a laterally coupled grating is demonstrated at a wavelength of 780.24 nm with up to 60 mW power. A mode expander and aluminum-free active layers have been used to reduce the linewidth to 612
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b547031f1e99f68626c73afce907881
http://hdl.handle.net/11382/536030
http://hdl.handle.net/11382/536030
Autor:
Joseph C. Bayley, Ross W. Millar, Martin Sinclair, Kevin Gallacher, Stefan Hild, Euan McBrearty, Marc Sorel, Douglas J. Paul
Publikováno v:
Optics Express. 28:4010
A silicon nitride micro-ring resonator with a loaded Q factor of 1.4 × 106 at 780 nm wavelength is demonstrated on silicon substrates. This is due to the low propagation loss waveguides achieved by optimization of waveguide sidewall interactions and