Zobrazeno 1 - 10
of 154
pro vyhledávání: '"Eu Jin Lim"'
Publikováno v:
PLoS ONE, Vol 10, Iss 9, p e0138522 (2015)
Immunosuppressants are used ubiquitously post-liver transplantation to prevent allograft rejection. However their effects on hepatocytes are unknown. Experimental data from non-liver cells indicate that immunosuppressants may promote cell death there
Externí odkaz:
https://doaj.org/article/f61b51a8725f43a9833ddd56cd7e706a
Autor:
Ran Ding, Yang Liu, Qi Li, Zhe Xuan, Yangjin Ma, Yisu Yang, Andy Eu-Jin Lim, Guo-Qiang Lo, Keren Bergman, Tom Baehr-Jones, Michael Hochberg
Publikováno v:
IEEE Photonics Journal, Vol 6, Iss 3, Pp 1-8 (2014)
We demonstrate a compact and low-power wavelength-division multiplexing transmitter near a 1550-nm wavelength using silicon microrings. The transmitter is implemented on a silicon-on-insulator photonics platform with a compact footprint of 0.5 mm2. T
Externí odkaz:
https://doaj.org/article/acc883e8cc0e4ebf89fc96c87ea0a211
Autor:
Mehul Lamba, Kimberley Ryan, Jason Hwang, Florian Grimpen, Gary Lim, Dale Cornelius, Alan Moss, Eu Jin Lim, Gregor J. Brown, Nam Q. Nguyen, Marcus D. Tippett, Andrew M. Taylor, Mark Appleyard
Publikováno v:
Gastrointestinal Endoscopy. 95:AB444-AB445
Autor:
Guo-Qiang Lo, Surya Bhattacharya, Andy Eu-Jin Lim, Vishal Vinayak Kulkarni, Do-Won Kim, M. Kumarasamy Raja, Jason Liow Tsung Yang
Publikováno v:
Procedia Engineering. 216:144-151
100 Gbps (4 × 25 Gbps) optical receiver (Rx) module is demonstrated using Germanium (Ge) photodetector (PD) which is fabricated through Silicon-photonics process using 750 ohm-cm of high-resistivity silicon oxide insulator (SOI) wafer. Trans-impedan
Publikováno v:
IEEE Photonics Technology Letters. 28:2447-2450
We report on the improvement of propagation loss in Ge-on-SOI waveguides developed for mid-infrared wavelengths. Strip waveguides of varying widths have been developed in 0.85 μm thick Ge core and an improvement of up to ~3.5 dB/cm has been achieved
Autor:
Jose Roman, Tal Galfsky, Ran Ding, Yury Dziashko, Yangjin Ma, Ruizhi Shi, Yang Liu, Alexandre Horth, Matthew Streshinsky, Marc Bohn, Hang Guan, Ari Novack, Yaojia Chen, Michael Hochberg, Peter Magill, Tam N. Huynh, Abdelrahman H. Ahmed, Dominick Scordo, Alexander V. Rylyakov, Daihyun Lim, Robert Palmer, Saeed Fathololoumi, Andy Eu-Jin Lim, Rick Younce, Amir Hanjani, Harald Rohde, T. Wuth, Mostafa Gamal Ahmed, Tom Baehr-Jones, Kishore Padmaraju, Abdellatif Elmoznine, Rafid Sukkar, Christopher S. Williams, Guido Saathoff
Publikováno v:
OFC
We demonstrate an all-silicon-photonic coherent link, including a hybrid tunable laser with 45dB SMSR, and
Autor:
Andy Eu-Jin Lim, Andrew A. Bettiol, Huang Li, Xianshu Luo, Patrick Guo-Qiang Lo, Bowei Dong, Kah-Wee Ang, Usman Younis
Publikováno v:
2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR).
We present mid-IR waveguides developed in Ge-on-SOI and SOI. The minimum loss achieved for Ge-on-SOI strip waveguides is ∼8 dB/cm and for SOI waveguides is ∼1.4 dB/cm for TE polarized light at 3.7 μm. These waveguides demonstrate the feasibility
Autor:
Junfeng Song, Qing Fang, Tsung-Yang Liow, Guo-Qiang Lo, Ying Huang, Andy Eu-Jin Lim, Haifeng Zhou, Xiaoguang Tu, Yanzhe Tang, Chao Li, Xianshu Luo, Lianxi Jia
Publikováno v:
2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
Silicon photonics circuits are playing more and more important role in optical communication and interconnect fields [1, 2]. Many silicon CMOS technique compatible photonics integrated devices are reported [3, 4]. Most of those silicon components are
Autor:
Yang Liu, Matthew Streshinsky, Ari Novack, Ran Ding, Tom Baehr-Jones, Michael Hochberg, Patrick Guo-Qiang Lo, Andy Eu-Jin Lim
Publikováno v:
Journal of Lightwave Technology. 32:4370-4377
We report a silicon nanophotonic parallel single mode transmitter and receiver with an aggregate data rate of 2.4 Tb/s. The transceiver is composed of 48 channels, each operating at 50 Gb/s. Bit error rate versus power measurements demonstrate that e
Autor:
Matthew Streshinsky, Jingcheng Tao, Guo-Qiang Lo, Tom Baehr-Jones, K. Tan, Ari Novack, Ruizhi Shi, Michael Hochberg, Andy Eu-Jin Lim
Publikováno v:
Journal of Lightwave Technology. 32:4345-4348
We present the design and fabrication of complimentary metal-semiconductor field-effect transistors (MESFETs) monolithically integrated on a high-speed silicon photonics platform. The transistors were built in an existing silicon photonics process wi