Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Etzelmüller Bathen, Marianne"'
Autor:
Lemva Ousdal, Erlend, Etzelmüller Bathen, Marianne, Galeckas, Augustinas, Kuznetsov, Andrej, Vines, Lasse
Publikováno v:
Journal of Applied Physics; 6/14/2024, Vol. 135 Issue 22, p1-9, 9p
Autor:
Knausgård Hommedal, Ylva, Etzelmüller Bathen, Marianne, Mari Reinertsen, Vilde, Magnus Johansen, Klaus, Vines, Lasse, Kalmann Frodason, Ymir
Publikováno v:
Journal of Applied Physics; 5/7/2024, Vol. 135 Issue 17, p1-19, 19p
Publikováno v:
Journal of Applied Physics; 1/21/2022, Vol. 131 Issue 3, p1-7, 7p
Autor:
Galeckas, Augustinas, Karsthof, Robert, Gana, Kingsly, Kok, Angela, Etzelmüller Bathen, Marianne, Vines, Lasse, Kuznetsov, Andrej
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science; May2023, Vol. 220 Issue 10, p1-7, 7p
Publikováno v:
Journal of Applied Physics, 131 (3)
Electrical properties of point defects in 4 H-SiC have been studied extensively, but those related to carbon interstitials (C i) have remained elusive until now. Indeed, when introduced via ion irradiation or implantation, signatures related to C i o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d7b050553e0c8213d354dfe0d14c4d9
Autor:
Reed, Benjamin P., Etzelmüller Bathen, Marianne, Ash, Jonathan W.R., Meara, Claire J., Zakharov, Alexei, Gross, Jonathan P., Wells, Justin W., Evans, D. Andrew, Cooil, Simon P.
Publikováno v:
Physical Review B, 105 (20)
The evolution of the diamond (111) surface as it undergoes reconstruction and subsequent graphene formation is investigated with angle-resolved photoemission spectroscopy, low energy electron diffraction, and complementary density functional theory c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3dc0f4a8dd06a775b39a87bddcc50c2
Autor:
Woerle, Judith, Etzelmüller Bathen, Marianne, Prokscha, Thomas, Galeckas, Augustinas, Ayedh, Hussein M., Vines, Lasse, Grossner, Ulrike
Publikováno v:
Physical Review Applied, 14 (5)
Low-energy muon-spin-rotation spectroscopy (LE-μ SR) is employed to study silicon and carbon vacancies in proton-irradiated 4H-Si C. We show that the implanted muon is quickly attracted to the negative Si vacancy (V Si), where it forms a paramagneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3a20c480a5c2c6d58451c336fb556be
http://hdl.handle.net/10852/83249
http://hdl.handle.net/10852/83249
Autor:
Etzelmüller Bathen, Marianne, Galeckas, Augustinas, Karsthof, Robert, Delteil, Aymeric, Sallet, Vincent, Kuznetsov, Andrej Yu, Vines, Lasse
Point defects in semiconductors are promising single-photon emitters (SPEs) for quantum computing, communication, and sensing applications. However, factors such as emission brightness, purity. and indistinguishability are limited by interactions bet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3780a70b7e028359abc18fee8ab1ebd