Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Etsuko Shioya"'
Autor:
Seiichi Watanabe, Etsuko Shioya, Masahiko Ishino, Hiroaki Abe, Somei Ohnuki, Takanori Suda, Osamu Yoda, Fritz Phillip
Publikováno v:
MATERIALS TRANSACTIONS. 43:650-653
In the Mo–Si system, there are three typical intermetallic compounds. In order to get insight into the phase stability under irradiation, interface structure and non-equilibrium phase formation in multilayer materials with several nanometers scale
Autor:
Katsuyuki Moriya, Hiroshi Kiguchi, Tomoyuki Kamakura, Keisuke Yamada, Wakao Miyazawa, Toshimitsu Hirai, Etsuko Shioya, Tatsuya Shimoda, Yoshiyuki Yagami, Satoshi Inoue
Publikováno v:
SID Symposium Digest of Technical Papers. 37:1575
Metal electrodes for low-temperature polycrystalline-silicon (LTPS) p-channel thin-film-transistors (TFTs) have been fabricated employing an inkjet technique. This technique has the potential to reduce device fabrication costs and energy consumption